The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Mar. 21, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 29/41733 (2013.01); H01L 29/456 (2013.01); H01L 29/66765 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78678 (2013.01);
Abstract
A dual channel transistor includes a first gate electrode, a second gate electrode, a first gate insulation layer, a second gate insulation layer, a silicon semiconductor channel layer, and an oxide semiconductor channel layer. The first gate insulation layer is disposed on the first gate electrode. The silicon semiconductor channel layer is disposed on the first gate insulation layer. The oxide semiconductor channel layer is disposed on the silicon semiconductor channel layer. The second gate insulation layer is disposed on the oxide semiconductor channel layer. The second gate electrode is disposed on the second gate insulation layer.