The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Mar. 01, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Wei-Lun Hsu, Taichung, TW;
Hsin-Che Huang, Tainan, TW;
Shyan-Liang Chou, Tainan, TW;
Hung-Lin Shih, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A complementary metal oxide semiconductor (CMOS) device is disclosed. The CMOS device includes a substrate with a first device region and a second device region formed thereon. A first isolation structure is formed in the first device region, and includes a first trench filled with a first material. A second isolation structure is formed in the second device region and includes a second trench filled with a second material. The first material and the second material have different stresses. A first gate structure is disposed atop the first material and completely covering the first trench. A second gate structure is disposed atop the second material and completely covering the second trench.