The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Aug. 30, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chun-Tsen Lu, Tainan, TW;

Chien-Ming Lai, Tainan, TW;

Lu-Sheng Chou, Kaohsiung, TW;

Ya-Huei Tsai, Tainan, TW;

Ching-Hsiang Chiu, Yilan County, TW;

Yu-Tung Hsiao, Tainan, TW;

Chen-Ming Huang, Taipei, TW;

Kun-Ju Li, Tainan, TW;

Yu-Ping Wang, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); C22C 32/00 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); B32B 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); B32B 1/00 (2013.01); C22C 32/0068 (2013.01); H01L 21/28088 (2013.01); H01L 29/4238 (2013.01); H01L 29/4966 (2013.01); H01L 29/511 (2013.01);
Abstract

A semiconductor device is disclosed. The semiconductor device includes a substrate and a gate structure on the substrate. The gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, in which the top portion being a nitrogen rich portion, and the middle portion and the bottom portion being titanium rich portions.


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