The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Jun. 19, 2015
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Xia Li, San Diego, CA (US);

Xiaochun Zhu, San Diego, CA (US);

Yu Lu, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/15 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/226 (2013.01); G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01L 27/22 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

A complementary bit cell includes a first magnetic tunnel junction (MTJ) device having a free layer coupled to a first access transistor and having a pinned layer coupled to a bit line. The complementary bit cell also includes a second MTJ device having a free layer coupled to the same bit line and having a pinned layer coupled to a second access transistor.


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