The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Nov. 16, 2016
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0285 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1083 (2013.01); H01L 29/66575 (2013.01);
Abstract
An electrostatic discharge (ESD) device includes a gate structure, disposed on a substrate. A drain doped region of a first conductive type is in the substrate, adjacent to a first side of the gate structure, wherein the drain doped region has a first impurity concentration. A first doped region of the first conductive type is disposed within the drain doped region and being at least distant from the gate structure by a distance. The first doped region has a second impurity concentration lower than the first impurity concentration.