The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Sep. 01, 2016
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventors:
Takehiro Nakai, Mie, JP;
Norihiko Tsuchiya, Kanagawa, JP;
Sakae Funo, Tokyo, JP;
Junichi Shimada, Tokyo, JP;
Youko Itabashi, Tokyo, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); C09K 13/08 (2006.01); H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
H01L 22/24 (2013.01); C09K 13/08 (2013.01); H01L 21/02238 (2013.01); H01L 21/30604 (2013.01);
Abstract
An etching method for detecting crystal defects, the method includes providing a substrate with an etchant containing hydrogen fluoride, nitric acid, hydrogen chloride, and water. A concave portion on a part having a crystal defect of the substrate is formed by the etchant. The concave portion is examined by a microscope to locate a position of the crystal defect.