The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Aug. 11, 2014
Shanghai Ic R&d Center Co., Ltd., Shanghai, CN;
Min Zhong, Shanghai, CN;
SHANGHAI IC R&D CENTER CO., LTD, Shanghai, CN;
Abstract
A method of forming copper interconnects includes: depositing a dielectric layer on a silicon wafer substrate; forming vias and/or trenches in the dielectric layer; next, depositing a barrier layer and a copper seed layer sequentially from bottom to up on the dielectric layer; depositing a copper layer on the copper seed layer, and performing an annealing process; then performing a multi-step polishing process to remove bulk coppers and stopping at the barrier layer; performing a planarization process to remove the barrier layer on the surface of the dielectric layer, a portion of the dielectric layer, and a portion of the copper in the vias and/or trenches to form the copper interconnects in the dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile