The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

May. 05, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hee-Woong Kang, Suwon-si, KR;

Donghun Kwak, Hwaseong-si, KR;

Daeseok Byeon, Seongnam-si, KR;

Ju Seok Lee, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/16 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 11/5635 (2013.01); G11C 16/08 (2013.01); G11C 16/3445 (2013.01); G11C 16/0483 (2013.01);
Abstract

A nonvolatile memory system includes a nonvolatile memory device and a memory controller that controls the nonvolatile memory device. The nonvolatile memory device includes multiple memory blocks. Each of the memory blocks includes memory cells. Each of the memory cells has any one of an erase state and one of multiple different program states. An operation method of the nonvolatile memory system includes receiving a physical erase command from an external device. The operation method also includes performing a fast erase operation, responsive to the received physical erase command, with respect to at least one memory block so that first memory cells of the at least one memory block have a fast erase state different from the erase state.


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