The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Oct. 09, 2014
Applicants:
E. I. Du Pont DE Nemours and Company, Wilmington, DE (US);
Ekc Technology Inc, Hayward, CA (US);
Inventor:
Hua Cui, Castro Valley, CA (US);
Assignees:
EKC TECHNOLOGY INC, , CA (US);
E I DU PONT DE NEMOURS AND COMPANY, Wilmington, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 7/32 (2006.01); C11D 11/00 (2006.01); G03F 7/42 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); C23F 1/18 (2006.01); C23F 1/26 (2006.01); C23F 1/28 (2006.01); C23F 1/34 (2006.01); C23F 1/38 (2006.01); C23F 1/40 (2006.01); C11D 3/39 (2006.01); C11D 7/26 (2006.01); B08B 3/08 (2006.01); C11D 7/04 (2006.01); B08B 3/10 (2006.01); C11D 3/20 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C11D 11/0047 (2013.01); B08B 3/08 (2013.01); B08B 3/10 (2013.01); C11D 3/2082 (2013.01); C11D 3/3942 (2013.01); C11D 3/3947 (2013.01); C11D 7/04 (2013.01); C11D 7/265 (2013.01); C11D 7/3209 (2013.01); C11D 7/3218 (2013.01); C11D 7/3245 (2013.01); C11D 7/3281 (2013.01); C23F 1/18 (2013.01); C23F 1/26 (2013.01); C23F 1/28 (2013.01); C23F 1/34 (2013.01); C23F 1/38 (2013.01); C23F 1/40 (2013.01); G03F 7/423 (2013.01); G03F 7/425 (2013.01); G03F 7/426 (2013.01); H01L 21/02057 (2013.01); H01L 21/02063 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 21/76807 (2013.01); H01L 21/76814 (2013.01); H01L 21/31144 (2013.01);
Abstract
The present disclosure relates to a method for removing a hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W from a semiconductor substrate. The method comprising contacting the semiconductor substrate with a removal composition. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.