The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Feb. 14, 2014
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Toshihiro Doi, Naka-gun, JP;

Hideaki Sakurai, Naka-gun, JP;

Nobuyuki Soyama, Naka-gun, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); B05D 3/02 (2006.01); B05D 1/38 (2006.01); H01L 21/02 (2006.01); C23C 14/08 (2006.01); C23C 14/58 (2006.01); C23C 18/12 (2006.01);
U.S. Cl.
CPC ...
B05D 3/0254 (2013.01); B05D 1/38 (2013.01); C23C 14/088 (2013.01); C23C 14/5806 (2013.01); C23C 18/1216 (2013.01); C23C 18/1225 (2013.01); C23C 18/1241 (2013.01); C23C 18/1254 (2013.01); H01L 21/022 (2013.01); H01L 21/02197 (2013.01); H01L 21/02282 (2013.01); H01L 21/02304 (2013.01); H01L 28/56 (2013.01); Y10T 428/26 (2015.01);
Abstract

A method includes: coating a composition for forming a PZT ferroelectric film not containing Nb on a lower electrodeformed on a substrate, prebaking the composition, and baking the composition to be crystallized and to thereby form a crystallization promoting layerhaving a thickness 45 to 90 nm thereon; coating a composition for forming a PNbZT-based ferroelectric film, containing 4 to 10 at % of Nb in 100 at % of all the perovskite B site atoms (Zr, Ti) contained in the composition, on the formed crystallization promoting layerto form a coating filmof PNbZT thereon; and pre-baking the coating filmand then baking the coating filmto be crystallized and to thereby form a PNbZT ferroelectric thin film on the lower electrode


Find Patent Forward Citations

Loading…