The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Jul. 21, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
I-Fan Chang, Hsinchu, TW;
Chi-Ju Lee, Tainan, TW;
Yen-Liang Wu, Taipei, TW;
Wen-Tsung Chang, Tainan, TW;
Jui-Ming Yang, Taichung, TW;
Dien-Yang Lu, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7854 (2013.01); H01L 29/0653 (2013.01);
Abstract
A field-effect transistor includes a substrate having thereon an isolation region. A fin structure protrudes from a top surface of the isolation region. The fin structure extends along a first direction. A gate electrode strides across the fin structure and extends along a second direction. A fin corner layer wraps a lower portion of the gate electrode around the fin structure. A spacer covers a sidewall of the gate electrode and the fin corner layer.