The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Dec. 21, 2011
Alexei Koudymov, Troy, NY (US);
Alexei Koudymov, Troy, NY (US);
Power Integrations, Inc., San Jose, CA (US);
Abstract
Devices are disclosed for providing heterojunction field effect transistor (HFETs) having improved performance and/or reduced noise generation. A gate electrode is over a portion of the active region and is configured to modulate a conduction channel in the active region of an HFET. The active region is in a semiconductor film between a source electrode and a drain electrode. A first passivation film is over the active region. An encapsulation film is over the first passivation film. A first metal pattern on the encapsulation film includes a shield wrap over the majority of the active region and is electrically connected to the source electrode.