The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Mar. 27, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Bang-Tai Tang, New Taipei, TW;

Tai-Chun Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42356 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01);
Abstract

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a gate stack structure formed over a substrate, and the gate stack structure includes a bottom portion and a top portion. The bottom portion includes a gate electrode layer formed over a substrate. The top portion includes a protection layer formed over the gate electrode layer, a stop layer formed over the protection layer, and the stop layer is surrounded by the protection layer. A cap layer is formed over the stop layer, and the cap layer is surrounded by the stop layer.


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