The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Mar. 18, 2016
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Jong-Koo Lim, Icheon-si, KR;

Guk-Cheon Kim, Icheon-Si, KR;

Yang-Kon Kim, Icheon-Si, KR;

Ku-Youl Jung, Icheon-Si, KR;

Won-Joon Choi, Icheon-Si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/222 (2013.01); G06F 3/0604 (2013.01); G06F 3/0647 (2013.01); G06F 3/0683 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract

Implementations of the disclosed technology provide an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a magnetic tunnel junction (MTJ) structure including a free layer having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer sandwiched between the free layer and the pinned layer; and an under layer located under the MTJ structure, wherein the under layer includes a first under layer including a silicon-based alloy, and a second under layer located on the first under layer and including a metal.


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