The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Jul. 03, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Hidekazu Nobuto, Hiroshima, JP;
Assignee:
Micron Technologies, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 27/108 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10891 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 27/10876 (2013.01);
Abstract
A method of forming conductive material of a buried transistor gate line includes adhering a precursor comprising tungsten and chlorine to material within a substrate trench. The precursor is reduced with hydrogen to form elemental-form tungsten material over the material within the substrate trench from the precursor.