The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

May. 03, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Lin Zhang, San Jose, CA (US);

Xuesong Lu, Santa Clara, CA (US);

Andrew V. Le, San Jose, CA (US);

Jang Seok Oh, Suwon, KR;

Xinhai Han, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32082 (2013.01); H01J 37/32862 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01);
Abstract

Embodiments of the disclosure include methods for in-situ chamber cleaning efficiency enhancement process for a plasma processing chamber utilized for a semiconductor substrate fabrication process. In one embodiment, a method for performing a plasma treatment process after cleaning a plasma process includes performing a cleaning process in a plasma processing chamber in absent of a substrate disposed thereon, subsequently supplying a plasma treatment gas mixture including at least a hydrogen containing gas and/or an oxygen containing gas into the plasma processing chamber, applying a RF source power to the processing chamber to form a plasma from the plasma treatment gas mixture, and plasma treating an interior surface of the processing chamber.


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