Chartered Semiconductor Manufacturing Ltd (corporation)

Zou Zheng

Zhou Mei Sheng

Yelehanka Ramachandramurthy Pradeep

Paul Proctor

Qinghua Zhong

Yelehanka Ramachandra Pradeep

A novel method to remove residual toxic gases trapped by a polymerizing process by an inert ion sputter is described. A masking layer is formed overlying a semiconductor substrate. An opening is etched through the masking layer into the semiconductor substrate whereby a polymer forms on sidewalls of the opening and whereby residual toxic gas reactants from gases used in the etching step are adsorbed by the polymer. Thereafter, the polymer is sputtered with non-reactive ions whereby the residual toxic gas reactants are desorbed from the polymer to complete removal of residual toxic gas reactants in the fabrication of an integrated circuit device.

Toxic residual gas removal by non-reactive ion sputtering

A new method of controlling the level of cleaning of the etch chamber by measuring the light emission caused by particles within the plasma of the etch chamber. The etch chamber clean process is invoked as soon as the level of contaminants within the etch chamber is observed as being too high. This measuring of the contaminants within the etch chamber is performed by measuring the particle light emission. The etch chamber cleaning process is considered complete when the light intensity created by existing particles in the chamber drops by a certain percentage.

Growing community of inventors

Singapore, Singapore

Zou Zheng