Semiconductor Technology Academic Research Center

International Superconductivity Technology Center

Ziyuan Liu

Tadataka Morishita

Haruhiko Takahashi

Masaki Yoshimaru

Koji Usuda

Masaharu Oshima

Liu Guo-lin

Kazuto Ikeda

A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Method of manufacturing an insulating film containing hafnium

The atoms constituting a surface of a solid sample are identified by first forming, on the surface, island-like deposits of a substance capable of generating fluorescent X-rays upon being energized by an electron beam. The deposits are then energized with the electron beam so that fluorescent X-rays are emitted therefrom and reflected on the surface. From the critical angle for total reflection of the fluorescent X-rays reflected on that portion of the surface of the sample on which no deposits are present, the atoms constituting the surface may be determined. An apparatus for carrying out the above method is also disclosed which is a modification of the conventional RHEED/TRAXS device.

Method for identifying surface atoms of solid sample and apparatus

Growing community of inventors

Kawasaki, Japan

Ziyuan Liu