Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Zhendong Liu

Yi Guo

Kancharla-Arun Kumar Reddy

Guangyun Zhang

John Francis Quanci

Terence M Thomas

Jinru Bian

Ross E Barker, Ii

Robert E Schmidt

Matthew R VanHanehem

Kai Hu

Hugh Li

Ross E Ii Barker

A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising water; 1 to 40 wt % colloidal silica abrasive particles having an average particle size of &#x2266;50 nm; and 0 to 5 wt % quarternary ammonium compound; wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free; and, wherein the chemical mechanical polishing composition has a pH &#x3e;6 to 12.

Chemical mechanical polishing composition and methods relating thereto

A chemical mechanical polishing composition is provided, comprising, as initial components: water, an abrasive; a diquaternary substance according to formula (I); a derivative of guanidine according to formula (II); and, optionally, a quaternary ammonium salt. Also, provided is a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing the chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6.

Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate

A chemical mechanical polishing slurry composition is provided, having, as initial components: water; an abrasive, wherein the abrasive is colloidal silica abrasive; a halogenated quaternary ammonium compound according to formula (I); optionally, a diquaternary substance according to formula (II); and, optionally, a pH adjusting agent selected from phosphoric acid, nitric acid, sulfuric acid, hydrochloric acid, ammonium hydroxide and potassium hydroxide; wherein the chemical mechanical polishing slurry composition has a pH of 2 to &#x3c;7. Also, provided are methods for making the chemical mechanical polishing slurry composition and for using the chemical mechanical polishing composition to polish a substrate.

Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate

A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.

Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride

A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an acyclic organosulfonic acid compound, wherein the acyclic organosulfonic acid compound has an acyclic hydrophobic portion having 6 to 30 carbon atoms and a nonionic acyclic hydrophilic portion having 10 to 300 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.

A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon, silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; and a substance according to formula I wherein each of R, R, R, R, R, Rand Ris a bridging group having a formula &#x2014;(CH)&#x2014;, wherein n is an integer selected from 1 to 10; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the silicon oxide and silicon nitride is removed from the substrate.

Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride

A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each Ris independently selected from hydrogen, a saturated or unsaturated Calkyl group, Caryl group, Caralkyl group, Calkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).

Stabilized chemical mechanical polishing composition and method of polishing a substrate

A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I wherein R, Rand Rare each independently selected from a Calky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.

Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal

A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 40 wt % abrasive having an average particle size of 5 to 150 nm; 0.001 to 1 wt % of an adamantyl substance according to formula (II); 0 to 1 wt % diquaternary substance according to formula (I); and, 0 to 1 wt % of a quaternary ammonium compound. Also, provided is a method for chemical mechanical polishing using the chemical mechanical polishing composition.

A method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises: water, an abrasive; a diquaternary cation according to formula (I); and optionally a quaternary alkylammonium compound; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6; wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 &#x212b;/min.

Method for chemical mechanical polishing a substrate

A method for chemical mechanical polishing of a substrate comprising a barrier material in the presence of at least one of an interconnect metal and a low-k dielectric material using a chemical mechanical polishing composition comprising water; 1 to 40 wt % abrasive having an average particle size of &#x2266;100 nm; 0.001 to 5 wt % quaternary compound; a material having a formula (I): wherein R is selected from C-Calkyl, C-Caryl, C-Caralkyl and C-Calkaryl; wherein x is an integer from 0 to 20; wherein y is an integer from 0 to 20; wherein x+y&#x2267;1; and, wherein the chemical mechanical polishing composition has a pH&#x2266;5.

A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing composition. The chemical mechanical polishing composition comprises, as initial components: at least one of a first substance and a second substance; wherein the first substance is according to formula I wherein the second substance is according to formula II an abrasive; and water.

The polishing method uses a polishing solution for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisting of nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid for adjusting a pH level of the polishing solution to less than 3, at least 0.0025 benzotriazole inhibitor for reducing removal rate of the interconnect metals, 0 to 10 surfactant, 0.01 to 10 colloidal silica having an average particle size of less than 50 nm and balance water and incidental impurities. The polishing solution has a tantalum nitride material to copper selectivity of at least 3 to 1 and a tantalum nitride to TEOS selectivity of at least 3 to 1.

Selective barrier metal polishing method

The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quanternary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.

Multi-component barrier polishing solution

The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The polishing solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 0.0005 to 5 weight percent of at least one nonferrous accelerator selected from the group of a complexing agent for complexing the nonferrous metal and a water-soluble polymer containing an acrylic acid functional group and having a number average molecular weight of 100 to 1,000,000, 0 to 50 weight percent abrasive and balance water at a pH less than 7.

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King of Prussia, PA, United States of America

Zhendong Liu