Globalfoundries Inc.

Zhaoying Hu

Hui Zang

Ruilong Xie

Haiting Wang

Laertis Economikos

Jiehui Shu

Shesh Mani Pandey

Bingwu Liu

Yanping Shen

Guowei Xu

Hsien-Ching Lo

Jae Gon Lee

Manoj Joshi

Methods form devices by patterning a lower layer to form a fin, and forming a sacrificial gate along sidewalls of the fin. Such methods form a mask with cut openings on the sacrificial gate and remove sections of the fin and the sacrificial gate exposed through the cut openings to divide the fin into fin portions and create cut areas between the fin portions. Additionally, these methods remove the mask, epitaxially grow source/drains in the cut areas, replace the sacrificial gate with a gate conductor, and form a gate contact on the gate conductor over a center of the fin portions.

FinFETs having gates parallel to fins

Parallel fins are formed (in a first orientation), and source/drain structures are formed in or on the fins, where channel regions of the fins are between the source/drain structures. Parallel gate structures are formed to intersect the fins (in a second orientation perpendicular to the first orientation), source/drain contacts are formed on source/drain structures that are on opposite sides of the gate structures, and caps are formed on the source/drain contacts. After forming the caps, a gate cut structure is formed interrupting the portion of the gate structure that extends between adjacent fins. The upper portion of the gate cut structure includes extensions, where a first extension extends into one of the caps on a first side of the gate cut structure, and a second extension extends into the inter-gate insulator on a second side of the gate cut structure.

Using source/drain contact cap during gate cut

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Clifton Park, NY, United States of America

Zhaoying Hu