Sien (qingdao) Integrated Circuits Co., Ltd

Shandong University

Zhaosheng Meng

Min-Hwa Chi

Qingliang Zeng

Chenglong Wang

Zhuangzhuang Wu

Lirong Wan

Zhenguo Lu

Renhui Wang

Weimin Li

Xin Zhang

Liang Wang

Meng Chen

Xian Zhang

Yong Zhao

Zhiwei Qiu

Zhihai Liu

Weikang Song

Shaoqi Zhang

Yunyue Xie

Maolin Tian

Hongtian Xiao

Yang Yang

Gang Wang

Fanfan Ma

Pengchao Feng

Peisi Zhong

Shoubo Jiang

Deshan Xu

Ning An

Xiaohuan Wang

Shuai Kong

A Cu interconnect and a method of forming a Cu interconnect of damascene process is provided. A barrier layer is formed at a sidewall and a bottom of a through hole and a groove, constructing a Cu interconnecting line. The barrier layer comprises a metal crystal adhesion layer or a graphene layer. The metal crystal adhesion layer may be a Co, Ru or Os crystal layer. The metal crystal adhesion layer may enhance adhesion of Cu, inhibit diffusion of Cu toward a dielectric layer efficiently, and promoting electro-migration of Cu. The graphene layer may be an Carbon allotrope/graphene complex layer. The graphene layer may provide lower resistance for the Cu interconnect and increase adhesion between barrier and dielectric layer to improve EM. Both the metal crystal adhesion layer and the graphene layer may efficiently reduce the total thickness of the barrier layer and the first barrier layer to efficiently decrease resistance of the through hole.

Liner and barrier layer in dual damascene cu interconnect for enhanced EM and process

The present invention relates to a method of forming contact holes of a CMOS device and a method of making a CMOS device. Because a carbon cap layer or a carbon rich layer is formed on a etching stop layer, when etching reaches the etching stop layer with less depth, great polymer protecting the etching stop layer from etching will be formed in the etching stop layer. As such, when etching reaches the contact holes with more depth, the contact holes with less depth may be protected from over-etching until etching the contact holes with more depth is finished. Over-etching may be avoided, and meanwhile the contact holes with more depth may be fully etched to avoid from under-etching.

Method to form contacts with multiple depth by enhanced CESL

A Cu interconnect having a diffusion barrier formed with the self-formed high-entropy alloy a method of preparing the same are provided. A high-entropy alloy and Cu are deposited together. When annealing, a diffusion barrier is formed through segregation of the high-entropy alloy may, toward a bottom and a sidewall of an interconnect via, and a Cu seed layer is formed through segregation of Cu at an outer surface of the diffusion barrier, so as to simultaneously self-form the diffusion barrier formed with the self-formed high-entropy alloy and the Cu seed layer. The Cu interconnect having a diffusion barrier formed with the self-formed high-entropy alloy comprises: a base, the self-formed diffusion barrier formed with the self-formed high-entropy alloy and the Cu seed layer and a Cu electroplating layer electroplating on the Cu seed layer.

Simultaneous self-forming hea barrier and Cu seeding layers for Cu interconnect

A monitoring and controlling method for a supporting pose of a hydraulic support includes reading length parameters of props; establishing a pose monitoring mathematic model; based on an interpolation algorithm, obtaining pose parameters including associated pose parameters of an angle of height, an angle of roof attachment, and angles of inclination of the props. The method further includes based on the support pose monitoring process, determining a current supporting pose; obtaining a contour line of a roof above the support, and determining a bulging edge of the roof; obtaining a height difference of a support canopy and the roof; calculating a target height and a target angle of roof attachment of the hydraulic support; based on a pose control mathematic model, calculating a target angle of height of the support; and substituting the target parameters into the pose monitoring mathematic model to solve target lengths of the props.

Method for monitoring and controlling supporting posture of supporting-type hydraulic support

The present invention relates to an ALD (Atomic layer deposition) apparatus and an ALD method. The ALD apparatus is provided with a reacting chamber and an annealing chamber, in which the reacting chamber is positioned with several heaters, a substrate to be deposited with an epitaxial layer may be transferred between different heaters, and each heater may independently moderate temperature. Different heaters correspond to different ALDs, and the number of the heaters may be varied to meet required a film to be deposited or composition of a crystal material. Because the heaters may be optimized to adapt to required temperature of different reactant gases, thickness of the epitaxial layer will meet expectation, and quality of the epitaxial layer will be promoted. Meanwhile, moderating the temperature independently may raise yield of production. Further, the ALD apparatus of the present invention introduces gas both horizontally and vertically to form a more even airflow field which benefits in forming a high-quality epitaxial layer.

ALD method with multi-chambers for sic or multi-elements epitaxial growth

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Qingdao, China

Zhaosheng Meng