Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Hitachi, Ltd.

Zhaohui Cheng

Hideyuki Kazumi

Hikaru Koyama

Hiroshi Makino

Takeyoshi Ohashi

Hideto Dohi

Mari Nozoe

Osamu Komuro

Kotoko Urano

Hiroyuki Shinada

Yoshinobu Kimura

Natsuki Tsuno

Kenji Tanimoto

Tomonori Nakano

Takashi Furukawa

Shingo Hayashi

Tasuku Yano

Seiko Omori

Junichi Tanaka

Hideo Todokoro

Mitsugu Sato

Yasunari Sohda

Yasutaka Toyoda

Hiroki Kawada

Naomasa Suzuki

Hiroya Ohta

Yuko Sasaki

Hideo Kashima

Hisaya Murakoshi

Yasuhiro Gunji

Masaki Hasegawa

Ruriko Tsuneta

Osamu Nasu

Yasunori Goto

Makoto Nishihara

Tomoko Sekiguchi

Yoshinobu Ootaka

Seiko Hitomi

Hiroaki Baba

Masanori Mita

Hiroyuki Matsui

A training method that performs learning using appropriate low-quality image and high-quality image is provided. The invention is directed to a training method including executing learning by inputting a first image generated under a first image generation condition and a second image generated under a second image generation condition different from the first image generation condition to a learning apparatus that adjusts parameters so as to suppress an error between an input image and a converted image, in which the second image is selected such that an index value extracted from the second image is the same as or has a predetermined relationship with an index value extracted from the first image, or the second image is output from a second image generation tool different from a first image generation tool for generating the first image.

Training method for learning apparatus, and image generation system

The present invention has been made in view of the above problems, and an object thereof is to provide a charged particle beam device capable of improving the reproducibility of the magnetic field response of a magnetic field lens and realizing highly-accurate electron orbit control in a short time. A charged particle beam device according to the present invention generates an excitation current of a magnetic field lens by combining a direct current with an alternating current (see FIG.A).

Charged particle beam device, and method for controlling charged particle beam device

A charged particle optical system includes an aberration correctorthat corrects aberration of a charged particle beam and has multipoles of a plurality of stages. The aberration corrector generates a plurality of multipole fields in a superimposed manner for each of the multipoles of the plurality of stages in order to correct the aberration of the charged particle beam. In order to reduce the influence of a parasitic field due to distortion of the multipole, for a first multipole field to be generated in a multipole of any stage among the plurality of stages, a value of a predetermined correction voltage or correction current to be applied to a plurality of poles for generating the first multipole field is corrected so as to eliminate movement of an observation image obtained based on electrons detected from a detectorby irradiating a sample with the charged particle beam before and after the first multipole field is generated.

Charged particle beam device and aberration correction method

An object is to provide a multipole unit capable of achieving both high positional accuracy and ease of assembling and preventing a decrease in the transmission rate of the magnetic flux. A multipole unitincludes a polethat is made of a soft magnetic metal material, a shaftthat is made of a soft magnetic metal material and is magnetically connected to the pole, and a coilthat is wound around the shaft. The poleis provided with a first fitting portion JPthat forms a first recessed portion or a first protruding portion. The shaftis provided with a second fitting portion JPthat forms a second protruding portion or a second recessed portion. The first fitting portion JPand the second fitting portion JPare fitted with each other such that the poleand the shaftare physically separated from each other.

Multipole unit and charged particle beam device

A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

Scanning electron microscope and sample observation method

A charged particle beam device using a multi-pole type aberration corrector includes: a charged particle source which generates a primary charged particle beam; an aberration correction optical system which corrects aberrations of the primary charged particle beam; a detection unit which detects a secondary charged particle generated from a sample irradiated with the primary charged particle beam whose aberrations have been corrected; an image forming unit which forms a charged particle image of the sample from a signal obtained by detecting the secondary charged particle; an aberration correction amount calculation unit which processes the charged particle image, separates aberrations having different symmetries, selects an aberration to be preferentially corrected from the separated aberrations, and calculates a correction amount of the aberration correction optical system; and an aberration correction optical system control unit which controls the aberration correction optical system based on the calculated correction amount.

Charged particle beam device and aberration correction method for charged particle beam device

In order to provide an aberration correction system that realizes a charged particle beam of which the anisotropy is reduced or eliminated on a sample surface even in the case where there is magnetic interference between pole stages of an aberration corrector, an correction system includes a line cross position control device () which controls a line cross position in the aberration corrector of the charged particle beam so that a designed value and an actually measured value of the line cross position are equal to each other, an image shift amount extraction device (), and a feedback determination device () which determines whether or not changing an excitation amount of the aberration corrector is necessary whether or not changing an excitation amount is necessary from an extracted image shift amount.

Aberration correction method, aberration correction system, and charged particle beam apparatus

A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning conditioHn according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S), then, the CD-SEM image and data in the shrink database are compared with each other (S), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S).

Method for estimating shape before shrink and CD-SEM apparatus

Provided are an aberration corrector that reduces irregularity of a magnetic field of a multipole to obtain an image of high resolution and a charged particle beam apparatus using the same. The aberration corrector includes a plurality of magnetic field type poles, a ring that magnetically connects the plurality of poles with one another and an adjustment member disposed between the pole and the ring to adjust a spacing between the pole and the ring per pole.

Aberration corrector and charged particle beam apparatus using the same

Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam. After charged particle beam irradiation for measurement of the sample, the apparatus controls a retarding voltage or/and an accelerating voltage at a stage previous to a next measurement, and then neutralizes an electric charge by reducing a difference between a value of the retarding voltage and that of the accelerating voltage to a value smaller than during the currently ongoing measurement. The charged particle beam achieves neutralizing without reducing throughput, since the local charge developed on the region of the sample that has been irradiated with the charged particle beam is removed, even without an additional device mounted in the apparatus.

Charged particle beam apparatus for removing charges developed on a region of a sample

Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction () of an electron beam is judged regarding an edge () of a pattern to be observed (S); if the edge is present, an area in the vicinity of the pattern edge is designated as a local pre-dose area () (S); a local pre-dose of an electron beam is performed, so that the initial charged state is controlled not to return secondary electrons generated by irradiation of an electron beam when an image is captured, to the surface of a sample.

Sample observing method and scanning electron microscope

A charged particle beam apparatus is provided which has high resolving power and a wide scanning region (observation field of view). The apparatus has a unit for adjusting the focus, a unit for adjusting astigmatism, a unit for controlling and detecting scanning positions and a controller operative to control the focus adjustment and astigmatism adjustment at a time in interlocked relation to the scanning positions, thereby assuring compatibility between the high resolving power and the observation view field of a wide area.

Charged particle beam apparatus

A charged particle beam device including a function for measuring localized static charges on a sample. A primary charged particle beam scans a sample positioned in a mirror state to acquire an image. The acquired image may be an image of the sample or may be an image of a structural component in the charged particle optical system. The acquired image is compared with a standard sample image and the localized static charge is measured.

Localized static charge distribution precision measurement method and device

An electrification control electrode B is installed at a measured or inspected specimen side of an electrification control electrode A, and a constant voltage is applied from an electrification control electrode control portion of an electrification control electrode B according to an electrification state of a specimen, whereby a variation of an electrification state and a potential barrier of a specimen surface formed before an inspection is suppressed. A retarding potential is applied by an electrification control electrode, and the electrification control electrode B is disposed below the electrification control electrode A adjusted to equal potential to a specimen. As a result, it is possible to adjust the amount that secondary electrons emitted from a specimen such as a wafer to which a primary electron beam is irradiated return to a specimen, and thus it is possible to stably maintain an inspection condition of high sensitivity during an inspection.

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Tokyo, Japan

Zhaohui Cheng