Shanghai Huali Integrated Circuit Corporation

Baoshan Iron & Steel Co., Ltd.

Shanghai Huali Integrated Circuit Mfg. Co., Ltd.

Zhanyuan Hu

Yu Zhang

Liyao Liu

Yongji Mao

Huojin Tu

Ronghong Ye

Jueyang Liu

Jie Huang

Bo Wang

Shishu Xie

Aihua Ma

Xiandong Liu

Liang Zou

Qin Deng

Zitao Wang

Yuhua Zhu

Bingzhong Jin

The disclosure provides a manufacturing method for a fin field-effect transistor. The method to make the fin field-effect transistor comprises: forming a fin structure and a gate structure spanning on the fin structure on a substrate; and forming a source-drain region on the fin structure, which comprises: forming an epitaxial layer; and forming a sacrificial layer on the surface of the epitaxial layer to prevent the epitaxial layer from being lost in the subsequent removal steps.

Manufacturing method of Fin field-effect transistor

An epitaxial growth process for a semiconductor device includes providing a semiconductor substrate, forming a plurality of Dummy Gate structures on the surface of the semiconductor substrate, and forming grooves in a self-aligned manner on both sides of the Dummy Gate structures; forming an initial seed layer on the inner side surfaces of the grooves, the thickness of the formed initial seed layer on the bottoms of the grooves being greater and the thickness of the formed initial seed layer on the sidewalls being smaller since the growth speed of crystal faces &#x3c;100&#x3e; and &#x3c;110&#x3e; is different; longitudinally etching the initial seed layer to thin the bottom of the initial seed layer to form a seed layer; forming a main body layer on the seed layer, the main body layer filling the grooves; and forming a cover layer on the main body layer.

Epitaxial growth process for semiconductor device and semiconductor device comprising epitaxial layer formed by adopting the same

Provided is a method for manufacturing a 14 nm-node BEOL 32 nm-width metal. A semiconductor structure for manufacturing BEOL wire is provided, wherein the semiconductor structure at least comprises a carbon coating and intermediate layer on it; forming a photoresist layer on the intermediate layer and exposing the photoresist layer according to a layout; developing the exposed photoresist layer by using a developing solution, and causing the developed photoresist to react with the intermediate layer in a contact region of the developed photoresist to form a peg groove; and etching by using the groove in the semiconductor structure to form a 14 nm-node BEOL 32 nm-width metal. This application can reducing the longitudinal shrink of the metal wire, achieving the improvement of the lateral and longitudinal shrink uniformity, reducing defects caused by misalignment of the through hole and the metal wire, and increasing the effective usable area of a chip.

Method for manufacturing a 14nm-node BEOL 32nm-width metal

The present disclosure relates to a FinFET and a manufacturing method of a contact. The manufacturing method comprises steps of: sequentially generating an interlayer dielectric layer, a metal hard mask, an oxide protective cap and a tri-layer mask on a gate to form a device to be etched; photoetching the tri-layer mask to remove photoresist in a non-patterned area; performing main etch on the device to be etched after the photoetching to remove the interlayer dielectric layer in the area that is not covered by the metal hard mask, and the metal hard mask is provided with the oxide protective cap; performing ODL removal on the device to be etched after the main etch to remove remaining part of the tri-layer mask; performing oxide etch on the device to be etched after the ODL removal to remove the oxide protective cap; and generating the contact on the device after the oxide etch. The present disclosure can accurately control the critical dimensions of the contact in an X direction and a Y direction.

FinFET and a manufacturing method of a contact thereof

A manufacture method of high-efficiency non-oriented silicon steel with excellent magnetic property includes the steps of smelting a chemical composition of non-oriented silicon steel, by weight percent, is: C&#x2266;0.0040%, Si:0.1&#x2dc;0.8%, Al:0.002&#x2dc;1.0%, Mn:0.10&#x2dc;1.50%, P:&#x2266;0.2%, Sb:0.04&#x2dc;0.08%, S&#x2266;0.0030%, N&#x2266;0.0020%, Ti&#x2266;0.0020%, and the rest is Fe and unavoidable inclusions. The molten steel is then cast into billets which are hot-rolled into a hot-rolled product. The heating temperature for the billet is 1100&#xb0;&#x2dc;1150&#xb0; and the finish-rolling temperature is 860&#xb0;&#x2dc;920&#xb0;. The hot-rolled product is then air cooled for a period of time within a range determined by air cooling time t: (2+30&#xd7;Sb%)s&#x2266;t&#x2266;7 s. The hot-rolled product is reeled at a temperature &#x2267;720&#xb0; and cold-rolled to form cold-rolled plate with a target thickness at a reduction ratio of 70&#x2dc;78% followed by heating up the cold-rolled plate to 800&#x2dc;1000&#xb0; at heating rate of &#x2267;15&#xb0;/s, and holding time of 10s&#x2dc;25s.

Manufacture method of high-efficiency non-oriented silicon steel with excellent magnetic performance

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Shanghai, China

Zhanyuan Hu