Tokyo Electron Limited

Zeyuan Ni

Taiki Kato

Yumiko Kawano

Shuji Azumo

Shinichi Ike

A film formation method includes (A) to (C) below: (A) preparing a substrate including, on a surface of the substrate, a first region from which an insulating film is exposed and a second region from which a metal film is exposed; (B) forming a self-assembled monolayer in the second region by supplying an organic compound containing a nitro group, which is a raw material of the self-assembled monolayer, in a head group to the surface of the substrate, and selectively adsorbing the organic compound to the second region among the first region and the second region; and (C) forming a second insulating film in the first region by supplying a raw material gas as a raw material of the second insulating film to the surface of the substrate while formation of the second insulating film in the second region is inhibited by the self-assembled monolayer.

Selective film formation using self-assembled monolayer

A method for manufacturing a semiconductor device including a TiN film. The method comprises: supplying TiClgas to a substrate; purging the TiClgas; supplying NHgas to the substrate; purging the NHgas; and supplying an inhibitor that inhibits adsorption of TiClor NHto the substrate. A plurality of cycles each including the supplying the TiClgas, the purging the TiClgas, the supplying the NHgas, and the purging the NHgas are performed, at least a part of the plurality of cycles includes the supplying the inhibitor, and after the supplying the inhibitor is performed, the supplying the TiClgas or the supplying the NHgas is performed without purging the inhibitor, or, after purging the inhibitor for a shorter time than the purging the TiClgas or the purging the NHgas, the supplying the TiClgas or the supplying the NHgas is performed.

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Yamanashi, Japan

Zeyuan Ni