Taiwan Semiconductor Manufacturing Comp. Ltd.

Zack Chong

Chia-Ming Tsai

Chandrashekhar Prakash Savant

Shih-Chi Lin

Tien-Wei Yu

Ming-Te Chen

The present disclosure describes a method for forming gate stack layers with a fluorine concentration up to about 35 at. %. The method includes forming dielectric stack, barrier layer and soaking the dielectric stack and/or barrier layer in a fluorine-based gas. The method further includes depositing one or more work function layers on the high-k dielectric layer, and soaking at least one of the one or more work function layers in the fluorine-based gas. The method also includes optional fluorine drive in annealing process, together with sacrificial blocking layer to avoid fluorine out diffusion and loss into atmosphere.

Growing community of inventors

Hsinchu, Taiwan

Zack Chong