Shimadzu Corporation

Yuzo Nagumo

Hiroomi Goto

Rui Kato

Yukihisa Wada

Naoji Moriya

Fujio Inoue

Naofumi Sakauchi

Masahiro Takebe

Kenji Takubo

Shinichiro Totoki

Shinichro Totoki

Makiko Masutomi

A system including an index assigning section estimating the thickness of a thin film based on the intensity of light reflected on a substrate and a theoretical formula expressing a relationship between the thickness of the thin film and the intensity of an interference light when the spectrum is obtained for the first time, and assigning indexes for each candidate value for the layer thickness; a layer thickness wide-range estimating section estimating the layer thickness within the range of the value of a layer thickness wide-range estimation width including the previously estimated value of the layer thickness based on the theoretical formula; a selecting section selecting an index from the indexes; a determining section determining a layer thickness wide-range estimation result; and a layer thickness determining section determining the thickness of the thin film based on the theoretical formula after calculating the layer thickness wide-range estimation result.

Surface processing progress monitoring system

A thickness monitoring device capable of performing thickness measurement of an object of measurement in real time even when using a relatively narrow band light source. This etching monitoring device (thickness monitoring device) includes a light source which produces measurement light having a predetermined wavelength bandwidth; an array detector which detects, for each wavelength, interference light of measurement light reflected from mask, whereof the thickness changes over time; and data processing unit which computes the thickness of the mask based on change over time of a plurality of single-wavelength components of the interference light detected by the array detector.

Thickness monitoring device, etching depth monitoring device and thickness monitoring method

A measurement light having a predetermined wavelength bandwidth from a light source is radiated onto the structure to be measured in a specimenlight reflected from a first plane and second plane of the structure to be measured is made to interfere in an optical fiber, and a spectrum of the interference light is generated. This interference light spectrum is acquired by a spectrometric unit at two time points separated in time, and in data processing unit, absolute difference area computation unit determines the absolute difference area of the difference spectrum. This absolute difference area changes periodically each time the dimension of the structure to be measured changes by &#x3bb;/4, making it possible to determine the dimension of the structure to be measured based on that change.

Depth of hole measurement by subtracting area of two spectra separated by time

An etching monitor device capable of high precision measurement in the presence of a mask region capable of producing interference. The device including an interference optical system which acquires reflected interference light containing three interference component signals, which are due respectively to optical path differences of reflected light between three sets of surfaces. The three interference component signals include a first interference based on an optical path between light reflected off of a mask surface and light reflected off of a top surface of the substrate, a second interference based on an optical path between the light reflected off of the top surface of the substrate and light reflected off of a surface to be etched, and a third interference based on an optical path between the light reflected off of the surface to be etched and the light reflected off of the mask surface.

Etching monitor device

The present invention relates to an optical measuring device which includes container for storing a sample, and an electrode pair for generating an electric field distribution upon impression of a voltage by an electrical power supply, thereby generating or extinguishing diffraction grating formed by a density modulation of particles within the sample. The particles within the sample are evaluated based upon a temporal change of an intensity of a diffracted light beam obtained by irradiating a light beam upon the diffraction grating formed by the density modulation of the particles. The electrodes constituting the electrode pair are configured to have a comb-like electrode teeth that are parallel with each other and are arranged such that the electrode teeth of one electrode are inserted between the electrode teeth of the other electrode. From such configuration, an optical measuring device of a high sensitivity and excellent S/N ratio can be obtained.

Optical measuring device

The invention provides an optical measuring device capable of performing measuring using a transient diffraction grating by only adjusting probe light, and a nanoparticle measuring device using the same principle as the optical measuring device. An optical measuring device includes: a power supply; a containerthat stores a sample; a pair of electrodesandthat generate an electric force line distribution in which areas having high electric force line density and areas having low electric force line density are regularly arranged; a dielectrophoresis control unitthat controls the generation of a transient diffraction grating using dielectrophoresis of particles in the sample caused by applying the voltage to the pair of electrodesandand a variation in the transient diffraction grating due to the diffusion of the particles in the sample according to a variation in the applied voltage; a light sourceemitting light to the transient diffraction grating; and a plurality of photodetectorsdetecting diffracted light generated by the transient diffraction grating. In the optical measuring device, the particles are evaluated on the basis of a variation in the intensity of the diffracted light generated by the transient diffraction grating. Further, for example, the particle diameter of a nanoparticle is measured by the same principle as the optical measuring device uses. As a result, it is possible to increase the intensity of a signal and to improve the sensitivity and the S/N ratio, as compared to a dynamic scattering method.

Growing community of inventors

Kyoto, Japan

Yuzo Nagumo