Basf Se Corporation

Ppg Industries Ohio, Inc.

Ferro Corporation

Dynea Chemicals Oy

Basf Corporation

Tbw Industries Inc.

Persee Chemical Co., Ltd.

Dynea Canada Ltd.

St. Lawrence Nanotechnology

Basf Taiwan Ltd.

Amia Corporation

Basf Schweiz Ag

Yuzhuo Li

Michael Lauter

Vijay Immanuel Raman

Yongqing Lan

Bastian Marten Noller

Mario Brands

Ilshat Gubaydullin

Kenneth Rushing

Daniel Kwo-Hung Shen

Jason Keleher

Robert Reichardt

Kwok Tang

Shyam Sundar Venkataraman

Guomin Bian

Diana Franz

Stuart Damon Hellring

Martin Kaller

Sophia Ebert

Christian Schade

Frank Rosowski

Suryadevara Vijayakumar Babu

Maxim Peretolchin

Alexander Kraus

Andreas Klipp

Volodymyr Boyko

Andrey Karpov

Joachim Dengler

Max Siebert

Christophe Gillot

Stephen J Benner

Frank Rittig

Christof Kujat

Reza M Golzarian

Sheik Ansar Usman Ibrahim

Joachim Von Seyerl

Zhihua Zhang

Zhenyu Bao

Kristine Hartnagel

Wei Lan William Chiu

Karpagavalli Ramji

Krishnayya Cheemalapati

Colin P McCann

Roland Lange

Charles F Kahle

Eason Yu-Shen Su

Philipp Zacharias

Wu Li

Mingjie Zhong

Christine Schmitt

Robert L Auger

Changxue Wang

Bettina Drescher

Albert Budiman Sugiharto

Roland Böhn

Harvey Wayne Pinder

Shyam S Venkataraman

Liang Jiang

Vivek Duvvuru

Deenesh Bundi

Henry Bian

Satish Narayanan

Atanu Roy Chowdhury

Ning Gao

John Westbrook

Leina Chan

Yong Lin

Joe Zunzi Zhao

Vaibhav Dalvi

Bir Darbar Mehta

Ke Wang

Jea-Ju Chu

Andreas Fechtenkötter

Nina Susanne Hilesheim

A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors

A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (&#x2014;COOR), sulfonate (&#x2014;SOR), sulfate (&#x2014;O&#x2014;SOR), phosphonate (&#x2014;P(&#x2550;O)(OR)(OR)), phosphate (&#x2014;O&#x2014;P(&#x2550;O)(OR)(OR)), carboxylic acid (&#x2014;COOH), sulfonic acid (&#x2014;SOH), sulfuric acid (&#x2014;O&#x2014;SO&#x2014;), phosphonic acid (&#x2014;P(&#x2550;O)(OH)), phosphoric acid (&#x2014;O&#x2014;P(&#x2550;O)(OH)) moiety, or their deprotonated forms, Ris alkyl, aryl, alkylaryl, or arylalkyl Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Chemical mechanical polishing (CMP) composition comprising a polymeric polyamine

A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, &#x2014;an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process

Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.

Chemical-mechanical polishing composition comprising organic/inorganic composite particles

Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.

Chemical mechanical polishing (CMP) composition comprising a protein

Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole.

Method for forming through-base wafer vias

A chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a glycoside of the formulae 1 to 6 wherein Ris alkyl, aryl, or alkylaryl, Ris H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, Ris H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, Ris H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, Ris H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, and the total number of monosaccharide units (X1, X2, X3, X4, X5, or X6) in the glycoside is in the range of from 1 to 20, and (C) an aqueous medium.

Chemical mechanical polishing (CMP) composition comprising a glycoside

A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(&#x2550;O)(OR1)(OR2) or phosphonic acid (P(&#x2550;O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives

A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (&#x2014;SH), thioether (&#x2014;SR) or thiocarbonyl (&#x3e;C&#x2550;S) group, wherein Ris alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (&#x2014;OH) groups and does not comprise any carboxylic acid (&#x2014;COOH) or carboxylate (&#x2014;COO&#x2014;) groups, and (C) an aqueous medium.

Post chemical-mechanical-polishing (post-CMP) cleaning composition comprising a specific sulfur-containing compound and a sugar alcohol or a polycarboxylic acid

A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or SiGematerial with 0.1&#x2266;x&#x3c;1 in the presence of a chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an oxidizing agent, (C) at least one type of an organic compound which comprises at least {k} moieties (Z), but excluding salts whose anions are inorganic and whose only organic cation is [NRRRR], wherein {k} is 1, 2 or 3, (Z) is a hydroxyl (&#x2014;OH), alkoxy (&#x2014;OR), heterocyclic alkoxy (&#x2014;ORas part of a heterocyclic structure), carboxylic acid (&#x2014;COOH), carboxylate (&#x2014;COOR), amino (&#x2014;NRR), heterocyclic amino (&#x2014;NRRas part of a heterocyclic structure), imino (&#x2550;N&#x2014;Ror &#x2014;N&#x2550;R), heterocyclic imino (&#x2550;N&#x2014;Ror &#x2014;N&#x2550;Ras part of a heterocyclic structure), phosphonate (&#x2014;P(=0)(OR)(OR)), phosphate (-0-P(=0)(OR)(OR)), phosphonic acid (&#x2014;P(=0)(OH)), phosphoric acid (-0-P(=0)(OH)) moiety, or their protonated or deprotonated forms, R, R, R, Ris&#x2014;independently from each other&#x2014;alkyl, aryl, alkylaryl, or arylalkyl, R, R, R, R, Ris&#x2014;independently from each other&#x2014;H, alkyl, aryl, alkylaryl, or arylalkyl, Ris alkylene, or arylalkylene, R, R, Ris&#x2014;independently from each other&#x2014;H, alkyl, aryl, alkylaryl, or arylalkyl, and R, R, Rdoes not comprise any moiety (Z), Ris alkyl, aryl, alkylaryl, or arylalkyl, and Rdoes not comprise any moiety (Z), and (D) an aqueous medium.

[object Object]

A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (CMP) of III-V material in the presence of a CMP composition comprising a specific non-ionic surfactant

Abrasive articles containing solid abrasive particles (A) selected from the group consisting of inorganic particles, organic particles and inorganic-organic hybrid particles (a1) having an average primary particle size of from 1 to 500 nm as determined by laser light diffraction and having electron donor groups (a2) chemically bonded to their surface are provided. The said solid abrasive particles (A) are distributed throughout or on top of or throughout and on top of a solid matrix (B). A method for manufacturing abrasive articles and a method for processing substrates useful for fabricating electrical and optical devices are provided. The said methods make use of the said abrasive articles.

Abrasive articles, method for their preparation and method of their use

A chemical-mechanical polishing ('CMP') composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.

Chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors

A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.

Chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles

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Heidelberg, Germany

Yuzhuo Li