Asm IP Holding B.v.

Yuya Nonaka

Hiroki Arai

Yukihiro Mori

Kunitoshi Namba

Akinori Nakano

Yozo Ikedo

Fumitaka Shoji

Richika Kato

Seiji Okuro

A substrate processing apparatus includes a stage provided in a chamber, a shower head in which a plurality of slits are formed and which is opposed to the stage, a first gas supply part which supplies a first gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which supplies a second gas which is not a noble gas to a region below the stage, wherein the second gas is the same gas as one of a plurality of kinds of gases constituting the first gas in a case where the first gas is a mixture gas constituted of the plurality of kinds of gases, and the second gas is the same gas as the first gas in a case where the first gas is a single kind of gas.

Substrate processing apparatus and method of processing substrate

A film forming apparatus includes a chamber having a processing space, a stage provided in the processing space and having a substrate placed thereon, a diffusion tube connected to the chamber so that a diffusion space communicating with the processing space is provided right above the stage, and a gas supply tube extending from the outside of the diffusion tube into the diffusion space through a portion of the diffusion tube and having a gas supply orifice in a portion thereof inside of the diffusion space. The gas supply orifice is formed so as to eject a material gas in a direction away from the stage.

Film forming apparatus

A method for protecting a layer includes: providing a substrate having a target layer and forming a protective layer on the target layer, said protective layer contacting and covering the target layer and containing a hydrocarbon-based layer constituting at least an upper part of the protective layer, which hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

Method for protecting layer by forming hydrocarbon-based extremely thin film

A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.

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Kawasaki, Japan

Yuya Nonaka