Tokyo Electron Limited

Yuya Minoura

Taku Gohira

Michiko Nakaya

Takahiro Murakami

Hayato Sakai

Takayuki Suzuki

Kaho Enomoto

A method of performing maintenance on a substrate processing apparatus is provided. The substrate processing apparatus includes a chamber and a gas supplier configured to supply a processing gas to an interior of the chamber. The method includes (a) supplying a first processing gas from the gas supplier to the interior of the chamber, and forming a protective film on a surface of a member in the interior of the chamber, and (b) after (a), exposing the interior of the chamber to an ambient environment and performing the maintenance on the substrate processing apparatus.

Method of performing maintenance on substrate processing apparatus

A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.

Plasma processing method

A temperature control method includes a switchover process, an ignition process, a slope calculation process, a first and a second control processes. In the switchover process, a heat medium to be supplied into a flow path is switched from a heat medium of a first temperature supplied from a first temperature controller to a heat medium of a second temperature supplied from a second temperature controller. In the slope calculation process, a slope of temperature change of the heat medium is calculated based on a temperature of the heat medium at an outlet side of the flow path. In the first control process, the second temperature controller is controlled until the temperature of the heat medium is stabilized to a temperature lower than a set value. In the second control process, the second temperature controller is controlled such that the temperature of the heat medium reaches the set value.

Temperature control method and plasma processing apparatus

An etching method prepares a substrate having laminated films including a first film and a second film that are alternately laminated, and a mask on the laminated films, and etches the laminated films by plasma of a process gas including a carbon and fluorine-containing gas. The carbon and fluorine-containing gas includes an unsaturated bond of C, and a CFgroup.

Etching method and plasma processing apparatus

Bending of a hole or a groove formed in a multilayered film including silicon oxide films and silicon nitride films alternately stacked on top of each other is suppressed. A plasma etching method includes a first etching process of etching, by plasma, the multilayered film including the silicon oxide films and the silicon nitride films alternately stacked on top of each other; and a second etching process of etching, by plasma, the multilayered film under a processing condition that an inclination of a portion of an inner sidewall of the hole or the groove, which is formed by the etching of the multilayered film, corresponding to the silicon nitride film with respect to a depth direction of the hole or the groove is reduced.

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Miyagi, Japan

Yuya Minoura