National Institute of Advanced Industrial Science and Technology

Showa Denko K.k.

Central Research Institute of Electric Power Industry

Yuuki Ishida

Hidekazu Tsuchida

Isaho Kamata

Kazutoshi Kojima

Kenji Momose

Michiya Odawara

Hajime Okumura

Keiichi Matsuzawa

Shiro Hara

Sommawan Khumpuang

Hitoshi Maekawa

Takashi Yajima

An encapsulated cleanroom system comprising a processing chamber and a storage section in which the processing chamber is stored, wherein, during operation, the pressure in the storage section is lower or higher than the pressures in the processing chamber and exterior space. The system can simultaneously prevent the entry of outside gases into its processing chamber and the leakage of the gases inside the processing chamber to the exterior space.

Encapsulated cleanroom system

An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cmor less.

Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate

Growing community of inventors

Tsukuba, Japan

Yuuki Ishida