Sharp Kabushiki Kaisha Corporation

International Superconductivity Technology Center

Fujitsu Corporation

Nec Corporation

Yuuji Mizuno

Masahiko Suzuki

Yoshimasa Chikama

Yoshiyuki Harumoto

Okifumi Nakagawa

Yoshifumi Ohta

Michiko Takei

Yoshinobu Miyamoto

Hirohiko Nishiki

Takeshi Hara

Tokuo Yoshida

Tetsuya Aita

Tetsuya Yamashita

Youichi Enomoto

Yoshihiro Ishimaru

Kazuo Nakagawa

Tsuyoshi Inoue

Shoji Tanaka

Katsumi Suzuki

Yoshifumi Ota

Yoshiyuki Miyajima

Each of the auxiliary capacitors () includes a capacitor line () comprised of the same material as the gate electrode () and provided in the same layer as the gate electrode (), the gate insulating film () provided so as to cover the capacitor line (), a capacitor intermediate layer () provided using the oxide semiconductor and provided on the gate insulating film () so as to overlap the capacitor line (), and a capacitor electrode () provided on the capacitor intermediate layer (), and the capacitor intermediate layer () is conductive.

Thin film transistor substrate and method for producing same

A semiconductor device (A) according to the present invention includes an oxide semiconductor layer (), first and second source electrodes (and), and first and second drain electrodes (and). The second source electrode () is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (). The second drain electrode () is formed to be in contact with a top surface of the first drain electrode () and inner to the first drain electrode (). The oxide semiconductor layer () is formed to be in contact with the top surface of the first source electrode () and the top surface of the first drain electrode ().

Thin film transistor having an oxide semiconductor thin film formed on a multi-source drain electrode

The present invention provides a thin film transistor including an oxide semiconductor layer () for electrically connecting a signal electrode () and a drain electrode (), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer () made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer () being in touch with the signal electrode () and the oxide semiconductor layer () and separating the signal electrode () from the oxide semiconductor layer (). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.

Thin film transistor, method for manufacturing same, active matrix substrate, display panel and display device

The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01&#x2266;Zn/(In+Zn)&#x2266;0.22.

Oxide semiconductor including Ga, In, Zn, and O and A thin film transistor and a display with the oxide semiconductor including Ga, In, Zn, and O

A display panel () includes a TFT substrate () in which a plurality of TFTs () are provided, a counter substrate () provided to face the TFT substrate (), and a display medium layer () provided between the TFT substrate () and the counter substrate (), a plurality of pixels being provided so that each of the plurality of pixels is associated with a corresponding one of the TFTs (), wherein an oxide semiconductor layer () is provided in each of the TFTs () as a channel, and an ultraviolet light absorbing layer () having a light transmitting property is provided in each of the pixels (P) so as to overlap the oxide semiconductor layer ().

Display panel and thin film transistor substrate

A semiconductor device includes: a thin film transistor having a gate line (), a first insulating film (), an island-shaped oxide semiconductor layer (), a second insulating film (), a source line (), a drain electrode (), and a passivation film; and a terminal portion having a first connecting portion () made of the same conductive film as the gate line, a second connecting portion () made of the same conductive film as the source line and the drain electrode, and a third connecting portion () formed on the second connecting portion. The second connecting portion is in contact with the first connecting portion within a first opening () provided in the first and second insulating films; the third connecting portion () is in contact with the second connecting portion within a second opening () provided in the passivation film; and the second connecting portion () covers end faces of the first and second insulating films within the first opening (), but does not cover an end face of the passivation film () within the second opening (). As a result, the taper shape of a contact hole of the terminal portion can be controlled with a high precision.

Semiconductor device and method for producing same

An active matrix substrate () includes a plurality of pixel electrodes () arranged in a matrix, and a plurality of TFTs () each connected to a corresponding one of the pixel electrodes (), and each including a gate electrode () provided on an insulating substrate (), a gate insulating film () covering the gate electrode (), a semiconductor layer () provided on the gate insulating film () and having a channel region (C) overlapping the gate electrode (), and a source electrode () and a drain electrode () of copper or copper alloy provided on the gate insulating film () and separated from each other by the channel region (C) of the semiconductor layer (). The semiconductor layer () is formed of an oxide semiconductor and covers the source electrode () and the drain electrode ().

Active matrix substrate and display panel

Any oxide superconductor Josephson junction element having an oxide superconductor oriented in the c-axis direction with respect to a substrate, and a needle-like, a-axis (or b-axis) oriented oxide superconductor. Both sides of the needle-like, a-axis (or b-axis) oriented oxide superconductor are sandwiched between the c-axis oriented superconductors. The crystal boundary sections between the needle-like, a-axis (or b-axis) oriented oxide superconductor and each of the c-axis oriented superconductors form a weak link of the Josephson junction. The needle-like, a-axis (or b-axis) oriented oxide superconductor is grown such that the c-axis direction thereof is oriented in the (110) direction which is inclined at an angle of 45 degrees with respect to the (100) direction or (010) direction of the c-axis oriented superconductors.

Oxide superconductor Josephson junction element and process for

An oxide superconductor element, produced by forming a damaged region on a substrate surface by the Ga.sup.+ focusing ion beam method and then depositing an oxide superconductor thin-film over it, is characterized in that a NdBa.sub.2 Cu.sub.3 O.sub.7-y (0.ltoreq.y.ltoreq.0.5) oxide superconductor is used in a tunnel junction having a tunneling barrier region with weak superconductivity.

Growing community of inventors

Osaka, Japan

Yuuji Mizuno