Japan Synthetic Rubber Co., Ltd.

Ucb Societe Anonyme

Yuuji Furuto

Yoshiyuki Harita

Mitsunobu Koshiba

Keiichi Yamada

Bruno Roland

Ria Lombaerts

Shin'ichi Kawamura

A method for high temperature reaction process, including the steps of mounting a substrate on which a radiation-sensitive polymer film is formed on a lower heating plate in a reaction vessel, sealing the reaction vessel while positioning an upper heating plate to above the substrate, maintaining a temperature difference between temperatures of the lower heating plate and the upper heating plate within a predetermined range, and supplying a reactive compound into the reaction vessel.

Method for high temperature reaction process

A reactive ion etching apparatus used in the manufacturing process of semiconductor elements such as ICs and LSIs is herein disclosed. The material to be etched is supported by a chucking device disposed on a negative electrode and in this apparatus, a magnetic field parallel to the surface of the material to be etched is generated. The reactive ion etching is carried out while cooling the negative electrode to a temperature of not more than 0.degree. C.

Reactive ion etching apparatus

Growing community of inventors

Nittamae, Japan

Yuuji Furuto