Sii Nanotechnology Inc.

Hitachi High-Tech Science Corporation

Seiko Instruments Inc

Yutaka Ikku

Yoshiki Matoba

Kouji Iwasaki

Junichi Tashiro

Toshiaki Fujii

Yo Yamamoto

Haruo Takahashi

Makoto Sato

Masanori Takahashi

Tatsuya Asahata

Hidekazu Suzuki

Kiyoshi Hasegawa

Takashi Kaito

Yoshitomo Nakagawa

Tatsuya Adachi

Takayuki Fukai

Koji Iwasaki

Tetsuji Nishimura

Hideki Takiguchi

An ICP emission spectrophotometer includes an inductively coupled plasma device, a spectroscope, and a computer. The spectroscope includes an incidence window, an incidence side slit, a diffraction grating, an emission window, an emission side slit, and a detector. Measurement conditions including diffraction condition and a measurement result are displayed on a display device. In a case where there are a plurality of diffraction conditions each including a combination of a diffraction grating and a diffraction order for measuring desired diffracted light, comparison information including at least an intensity and a resolution of emitted light in the diffraction condition is displayed on the display device. A measurer selects diffraction conditions in which resolution is higher from among the diffraction conditions, and selects a diffraction condition in which an intensity is obtained from among the selected diffraction conditions.

ICP emission spectrophotometer

An inductively coupled plasma generating device is configured to include a plasma torch, a high frequency induction coil and a high frequency power source. In addition, a heat transfer member, in which a first terminal is connected to the high frequency induction coil and a second terminal is connected to a cooling block, is disposed in the inductively coupled plasma generating device. The second terminal of the heat transfer member is located above the first terminal, thereby causing condensed operating fluid to fall and move toward the first terminal due to the action of gravity. Accordingly, it is possible to achieve excellent cooling capacity by improving circulation and mobility of the operating fluid.

Heat transfer system for an inductively coupled plasma device

An energy dispersive X-ray analyzer is attached to a scanning electron microscope and includes: a SEM controller; a detector; an EDS controller; and a data processor. The data processor generates first and second X-ray mapping image respectively when the SEM controller controls the scanning electron microscope to irradiate the sample with an electron beam under first and second acceleration voltage conditions. The data processor corrects the first X-ray mapping image and the second X-ray mapping image into images that are independent of acceleration voltage condition based on a measurement intensity variation ratio of the X-ray when changed from the first acceleration voltage condition to the second acceleration voltage condition, and controls the display unit to display a difference image between the corrected first X-ray mapping image and the corrected second X-ray mapping image.

Energy dispersive X-ray analyzer and method for energy dispersive X-ray analysis

The X-ray fluorescence analyzer () includes: an enclosure (); a door () for putting the sample into and out of the enclosure; a height measurement mechanism () capable of measuring a height at the irradiation point; a moving mechanism control unit () for adjusting a distance between the sample and the radiation source as well as the X-ray detector based on the measured height at the irradiation point; a laser unit () for irradiating the irradiation point with a visible light laser beam; a laser start control unit () for irradiating the visible light laser beam by the laser unit () when the door is open state; and a height measurement mechanism start control unit () for starting the height measurement mechanism to measure the height at the irradiation point when the door is opened.

X-ray fluorescence analyzer and X-ray fluorescence analysis method

An apparatus is provided that precisely conduct ion beam etching to a sample having the properties of which easily change by electron beam irradiation with no loss of ease of operation and throughput. An apparatus includes an ion beam lens barrel and an electron beam lens barrel, which can observe or measure the conditions of a sample with an electron beam in the process of etching with an ion beam, wherein first, an observation image is obtained that includes the entire process area formed by secondary signals generated by an electron beam, secondly, an irradiation permit area and an irradiation inhibit area are defined in the observation image, and thirdly, electron beam irradiation is restricted only to the irradiation permit area.

Composite charged particle beam apparatus, method of processing a sample and method of preparing a sample for a transmission electron microscope using the same

Provided are an X-ray tube and an X-ray analysis apparatus, which can be further reduced in size as well as in weight and more efficiently detect a fluorescent X-ray and the like to increase sensitivity. The X-ray tube includes: a vacuum casing () having an interior in a vacuum state and a window section () formed of an X-ray transmission film through which an X-ray can be transmitted; an electron beam source () provided in the vacuum casing (), to emit an electron beam (e); a target (T) provided in the vacuum casing () to be irradiated with the electron beam (e) to generate a primary X-ray and to be able to emit the generated primary X-ray through the window section () to an exterior sample (S); an X-ray detection element () provided in the vacuum casing () to be able to detect a fluorescent X-ray and a scattered X-ray, which are emitted from the sample (S) to be incident through the window section (), to output a signal containing energy information of the fluorescent X-ray and the scattered X-ray; and a metal guard member () provided between the X-ray detection element () and an irradiated area of the target (T) with the electron beam (e).

X-ray tube and X-ray analysis apparatus

A vacuumed enclosure has a window formed of an X-ray transmissive material. The vacuumed enclosure encloses an electron beam source for generating an electron beam and a target which, irradiated by the electron beam, generates a primary X-ray. The target is smaller in the outer dimension than the window and located on the center of the window such that it irradiates, through the window, the primary X-ray onto a sample located outside. The vacuumed enclosure further encloses an X-ray detector located such that it can detect a fluorescent X-ray and a scattered X-ray coming from the sample through the window. The X-ray detector generates a signal representative of energy information of the fluorescent X-ray and the scattered X-ray. The vacuumed enclosure further encloses a thermally and electrically conductive metal extending through the target across the widow.

Techniques for specifying an observing or working position of a sample are provided. Digitized data of a sample is obtained and stored in a 1st storage device. A 1st display area displays an image of a portion containing a desired observing or working position of the digitized data stored in the 1st storage device. A 1st position that is indicated by a pointing device on the 1st display area is stored in a 2nd storage device. The sample is moved to an observing or working position for observation, and an observation image of the sample is stored in the 3rd storage device. A 2nd display area displays the observation image of the sample stored in the 3rd storage device. A position indicated on the 2nd display area and corresponding to the 1st position stored in the 2nd storage device is stored in a 4th storage device. A conversion function for converting a coordinate system of the 1st display area and the 2nd display area is calculated using the 1st position stored in the 2nd storage means and the position stored in the 4th storage device. A position indicated in one of the 1st and 2nd display areas and corresponding to another position indicated in the other of the 1st and 2nd display areas is calculated in accordance with the calculated conversion function.

Method and apparatus for specifying working position on a sample and method of working the sample

Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.

Focused ion beam apparatus and sample section forming and thin-piece sample preparing methods

In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beamis irradiated, and a generated secondary electronis detected by a secondary electron detectorA calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating meansA film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample

Method and apparatus of measuring thin film sample and method and apparatus of fabricating thin film sample

To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.

Charged particle beam apparatus

A sample sealing vesselincludes a plurality of wall faces comprising a material for transmitting X-ray, an X-ray sourceis arranged at a wall faceto irradiate primary X-ray, a facedifferent from the face irradiated with the primary X-ray is arranged to be opposed to an X-ray detector, and the primary X-ray from the X-ray sourceis arranged to be able to irradiate the wall faceof the sample sealing vessel to which the X-ray detectoris opposed.

Fluorescent X-ray analysis apparatus

In a sample height regulating method, an area including the observation point on the sample is scan-irradiated with a first charged particle beam to obtain a first secondary electron image including the observation point. An area including the observation point on the sample is then scan-irradiated with a second charged particle beam to obtain a second secondary electron image including the observation point. Thereafter, based on magnifications of the first secondary electron image and the second secondary electron image and a distance between the observation point in the first secondary electron image and the observation point in the second secondary electron image, a height of the sample required for focusing the first charged particle beam and the second charged particle beam on the observation point is calculated. A sample stage supporting the sample is then displaced so as to position the sample at the calculated sample height.

Sample height regulating method, sample observing method, sample processing method and charged particle beam apparatus

A method of measuring a pattern by using a display microscope image comprises a step of setting an edge detection reference line by designating a range of detecting an edge and a number of edge points with regard to a respective side portion of the pattern in the microscope image, a step of sampling the edge point constituting a point of changing a brightness from image information by searching the edge point from a direction orthogonal to the set edge detection reference line, a step of providing a line approximating the respective side portion of the pattern based on position information of a plurality of the edge points and a step of specifying a shape of the pattern by an intersecting point of two pieces of lines, a specified point provided by a plurality of intersecting points, an angle made by two pieces of straight lines and a distance between two specified points from information of the approximated line approximating the respective side portion of the pattern.

Pattern measuring method and measuring system using display microscope image

A thin specimen producing method acquires a work amount in a 1-line scan by an FIB under a predetermined condition, measures a remaining work width of a thin film on an upper surface of a specimen by a microscopic length-measuring function, determines a required number of scan lines of work to reach a predetermined width by calculation, and executes a work to obtain a set thickness. The work amount in a one-line scan by the FIB under the predetermined condition is determined by working the specimen in scans of plural lines, measuring the etched dimension by the microscopic length-measuring function, and calculating an average work amount per one-line scan.

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Chiba, Japan

Yutaka Ikku