Tokyo Electron Limited

Tokyo Electron Limi Ted

Toyko Electron Limited

Yutaka Fujino

Taro Ikeda

Tomohito Komatsu

Shigeru Kasai

Yuki Osada

Hiroyuki Ikuta

Hirokazu Ueda

Hiroyuki Miyashita

Jun Nakagomi

Hideki Yuasa

Yoshihiro Sato

Toshio Nakanishi

Shigenori Ozaki

Tatsuo Nishita

Shuuichi Ishizuka

Junya Miyahara

Akira Tanihara

Yoshiyuki Kondo

Kentaro Shiraga

Junichi Kitagawa

Kohei Kawamura

Koji Akiyama

Genji Nakamura

Nobuhiko Yamamoto

Hikaru Adachi

Makoto Wada

Kotaro Miyatani

Atsushi Ueda

Takuya Kurotori

Takeo Wakutsu

Emiko Hara

Kenichi Kote

The cleaning method according to an embodiment of the present invention is for cleaning a plasma processing apparatus that performs a plasma processing on a substrate. This cleaning method includes: forming a protective film; and cleaning. The forming the protective film involves forming the protective film in a plasma generation region by generating plasma while supplying a film-forming gas into a processing container in which a processing space including the plasma generation region and a diffusion region is formed. The cleaning involves cleaning an interior of the processing container in which the protective film has been formed by generating plasma while supplying a cleaning gas into the processing container.

Cleaning method and plasma treatment device

This plasma processing method comprises: arranging a substrate in a region away from a microwave plasma generation region in a chamber; setting the pressure in the chamber to 1 Torr or higher; introducing microwaves from a microwave plasma source in the chamber, generating microwave plasma by introducing a processing gas containing a reducing gas, and diffusing active species from the microwave plasma in the microwave plasma generation region to the substrate side; and applying high-frequency power to the substrate to generate cathode-coupled plasma near the substrate and attract ions near the substrate to the substrate.

Plasma processing method and plasma processing apparatus

A film forming method of forming a film on a substrate by using a film forming apparatus including a processing container, and a stage provided in an interior of the processing container to place the substrate thereon and in which aluminum is contained, includes: forming a film continuously on one substrate or on a plurality of substrates by supplying a gas for film formation to the interior of the processing container while heating the substrate placed on the stage; cleaning the interior of the processing container with a fluorine-containing gas in a state in which the substrate is unloaded from the processing container; and performing a post-process by generating plasma of an oxygen- and hydrogen-containing-gas in the interior of the processing container, wherein the forming the film, the cleaning the interior of the processing container, and the performing the post-process are repeatedly performed.

Film forming method and film forming apparatus

A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.

A hard mask film forming method includes preparing a substrate in which an etching target film is formed on a base. The hard mask film forming method further includes forming a hard mask film on the substrate while controlling film forming parameters such that tensile stress is set as initial film stress and the tensile stress monotonously increases from a bottom surface of the hard mask film toward an upper surface of the hard mask film.

Method and apparatus for forming hard mask film and method for manufacturing semiconductor devices

A plasma processing apparatus includes a chamber, a mounting table for mounting thereon a target object in the chamber, a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber, a first gas introduction unit for introducing a first gas into the chamber from the ceiling wall, and a second gas introduction unit for introducing a second gas into the chamber from a location between the ceiling wall and the mounting table. The second gas introduction unit includes a ring-shaped member having a plurality of gas injection holes and provided at a predetermined height position between the ceiling wall and the mounting table, and a leg part which connects the ceiling wall and the ring-shaped member. The second gas is supplied to the ring-shaped member through the leg part.

Plasma processing apparatus and gas introduction mechanism

A plasma processing device processes a substrate by generating plasma using a surface wave formed on a surface of a shower plate by a supplied microwave, which includes a plasma generating antenna equipped with the shower plate for supplying first and second gases into a processing vessel, and a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. The first gas supply holes are disposed inward of the outer surface of the drooping member. The second gas supply holes are disposed outward of the outer surface of the drooping member.

Plasma processing device with shower plate having protrusion for suppressing film formation in gas holes of shower plate

A microwave plasma source radiating a microwave in a chamber of a plasma processing apparatus to generate surface wave plasma includes a microwave output unit configured to generate and output a microwave, a microwave supply unit configured to transmit the microwave output from the microwave output unit, and a microwave radiation member configured as a ceiling wall of the chamber and configured to radiate the microwave supplied from the microwave supply unit into the chamber. The microwave supply unit includes microwave introduction mechanisms provided along a circumferential direction, thereby introducing the microwave to the microwave radiation member. The microwave radiation member includes slot antennas having slots through which the microwave is radiated and a microwave transmission member. The slots are provided to form a circular shape as a whole. The microwave transmission member provided to form a circular ring shape.

Microwave plasma source and plasma processing apparatus

A substrate processing system for performing a process with respect to a plurality of substrates includes an annular process chamber configured to accommodate the plurality of substrates and to perform a predetermined process on the plurality of substrates, a cassette mounting part configured to mount a cassette which accommodates the plurality of substrates, and a substrate transfer mechanism configured to transfer the plurality of substrates between the annular process chamber and the cassette mounting part. The plurality of substrates is concentrically disposed within the annular process chamber in a plane view.

Substrate processing system

In a method of controlling a threshold of a transistor, a gate insulating film is formed in a channel region of a metal-oxide-semiconductor (MOS) transistor on a main surface of a semiconductor substrate. A first electrode layer is formed on the gate insulating film and a second electrode layer containing a work function adjusting metal is formed on the first electrode layer. Thereafter, an oxidation treatment or nitridation treatment using a microwave plasma processing apparatus is performed to inactivate the work function adjusting metal, thereby executing a threshold control of the MOS transistor.

Method of controlling threshold of transistor and method of manufacturing semiconductor device

A plasma processing apparatus includes a chamber; a mounting table configured to mount thereon a target object in the chamber; a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber; a first gas introduction unit configured to introduce a first gas into the chamber from the ceiling wall; and a second gas introduction unit configured to introduce a second gas into the chamber from a predetermined height position between the ceiling wall and the mounting table. The second gas introduction unit has a plurality of nozzles extending from the ceiling wall toward the mounting table and arranged on a same circumference at a regular interval. Each of the nozzles discharges the second gas toward a nozzle adjacent thereto.

Plasma processing apparatus

A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20&#xb0; C. to 145&#xb0; C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/mto 3.5 kW/mwith respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.

Method for manufacturing insulating film laminated structure

A plasma processing apparatus () includes a processing container () and a microwave introduction device () having a plurality of microwave introduction modules (). A microwave is introduced for each of the plurality of microwave introduction modules (), and S-parameters for each of combinations of the plurality of microwave introduction modules () are obtained based on the introduced microwave and a reflected microwave reflected from the processing container () into the plurality of microwave introduction modules ().

Acquisition method for S-parameters in microwave introduction modules, and malfunction detection method

A plasma processing apparatus including a processing vesselin which a plasma process is performed and a plasma generation antennahaving a shower platewhich supplies a first gas and a second gas into the processing vessel, performs the plasma process on a substrate with plasma generated by a surface wave formed on a surface of the shower platethrough a supply of a microwave. The shower platehas multiple gas holesconfigured to supply the first gas into the processing vesseland multiple supply nozzlesconfigured to supply the second gas into the processing vessel, and the supply nozzlesare protruded vertically downwards from a bottom surface of the shower plateand are provided at different positions from the gas holes

Plasma processing apparatus and shower plate

In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

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Nirasaki, Japan

Yutaka Fujino