Nissan Chemical Industries Limited

Yuta Kanno

Makoto Nakajima

Wataru Shibayama

Satoshi Takeda

Tadashi Hatanaka

Jun Ito

Hiroyuki Wakayama

Shojiro Yukawa

Kenji Takase

Kohei Goto

Daisuke Sakuma

Shuhei Shigaki

Hiroyuki Omura

Takahiro Kishioka

Yasushi Sakaida

Masayuki Haraguchi

Motonobu Matsuyama

Tomoko Misaki

A resist underlayer film for a resist pattern formation by developing a resist with organic solvent after exposure of resist. Method for manufacturing a semiconductor includes: applying onto a substrate a resist underlayer film forming composition including hydrolyzable silanes, hydrolysis products of hydrolyzable silanes, hydrolysis-condensation products of hydrolyzable silanes, or a combination thereof. Hydrolyzable silanes being silane of Formulas (1), (2) and (3). Silane of Formulas (1), (2) and (3) in total silanes in a ratio % by mole of 45-90:6-20:0-35; baking the applied resist underlayer film forming composition to form a resist underlayer film; applying a composition to form a resist film; exposing the resist film to light; developing the resist film after exposure, with organic solvent to obtain patterned resist film; and etching the resist underlayer film by using the patterned resist film and processing the substrate using the patterned resist underlayer film; whereinSi(R)&#x2003;&#x2003;Formula (1)R[Si(R)]&#x2003;&#x2003;Formula (2)R[Si(R)]&#x2003;&#x2003;Formula (3).

Method for manufacturing semiconductor device using silicon-containing resist underlayer film forming composition for solvent development

There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof as a silane, wherein a silane having a cyclic amino group is contained in an amount of less than 1% by mole, preferably 0.01 to 0.95% by mole. A film forming composition comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The cyclic amino group may be a secondary amino group or a tertiary amino group. The hydrolyzable organosilane is a compound of Formula (1):RRSi(R)&#x2003;&#x2003;Formula (1)(where Ris a cyclic amino group or an organic group containing a cyclic amino group).

Resist underlayer film forming composition containing silicone having cyclic amino group

A retardation material-forming resin composition for providing an orientation material that has high photoreaction efficiency and with which a polymerizable crystal can be aligned in a highly sensitive manner. A retardation material-forming resin composition being thermally curable wherein including a resin (component (A)) having a photo-aligning group to which a thermally reactive moiety is bonded directly or connected via a linking group; an orientation material obtained by use of the composition, and a retardation material formed by use of a cured film obtained from the composition.

Retardation material-forming resin composition, orientation material, and retardation material

A cured-film formation composition that forms a cured film exhibiting excellent liquid-crystal orientation properties and excellent light transmission properties when the cured-film formation composition is used as an orientation material and a layer of a polymerizable liquid crystal is arranged thereon. A cured-film formation composition including a component (A) that is a compound obtained by reacting a cinnamic acid compound of Formula (1) below with a compound having at least one epoxy group in one molecule, wherein R, R, R, R, and Rare each independently a substituent selected from a hydrogen atom, a halogen atom, a Calkyl, a Chaloalkyl, a Calkoxy, a Chaloalkoxy, cyano, and nitro; and a component (B) that is a cross-linking agent, an orientation material which is obtained from the composition, and a retardation material which is obtained from the composition.

Cured film formation composition, orientation material, and retardation material

A liquid crystal alignment agent for photo-alignment for providing an aligning member has excellent photoreaction efficiency and is capable of aligning polymerizable liquid crystals with high sensitivity. A liquid crystal alignment agent for photo-alignment includes (A) a resin having a side chain including a structure of Formula (1) and (B) a compound of Formula (2), an alignment member obtained from the liquid crystal alignment agent, and a retardation member: wherein X1 is a benzene ring which may be arbitrarily substituted with an substituent, R is a substituent selected from OH and NH, R, R, R, Rand Rare each independently a substituent selected from a hydrogen atom, a halogen atom, Calkyl, Chaloalkyl, etc., and n is an integer of 0 or 1. 

Liquid crystal alignment agent for photo-alignment, aligning member, and retardation member

A resist underlayer film forming composition for lithography for a resist underlayer film usable as a hardmask. A resist underlayer film forming composition for lithography, including: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2), and a content of the hydrolyzable silane of Formula (1) or the hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in all silanes is less than 50% by mole,RRSi(R)&#x2003;&#x2003;Formula (1)RRSi(R)&#x2003;&#x2003;Formula (2).

Resist underlayer film forming composition containing silicon having ester group

A cured-film formation composition suitable to form a cured film having liquid-crystal alignment properties. A cured-film formation composition including a component (A) that is one or more monomers having a group having a photo-alignment moiety and thermally reactive moiety, and a polymerizable group; component (B) that is at least one polymer selected from the group of components (B-1) to (B-3) (the component (B-1) being a polymer having, in a quantity of at least two of at least one group selected from the group of hydroxy group, carboxyl group, amide group, amino group, an alkoxysilyl group and group of Formula (2), component (B-2) being a polymer capable of thermally reacting with thermally reactive moiety of component (A) and is self-cross-linkable, and component (B-3) being a melamine formaldehyde resin); and component (C) that is a cross-linking agent; and an orientation material and retardation material which are formed of the cured-film formation composition.

Cured film formation composition, orientation material and retardation material

A retardation material-forming resin composition for providing an orientation material that has high photoreaction efficiency and with which a polymerizable liquid crystal can be aligned in a highly sensitive manner. A retardation material-forming resin composition being thermally curable wherein including a resin (component (A)) having a photo-aligning group to which a thermally reactive moiety is bonded directly or connected via a linking group; an orientation material obtained by use of the composition, and a retardation material formed by use of a cured film obtained from the composition.

A resist underlayer film composition for lithography, including: a silane: at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes a silane having a cyclic organic group containing as atoms making up the ring, a carbon atom, a nitrogen atom, and a hetero atom other than a carbon and nitrogen atoms. The hydrolyzable organosilane may be a hydrolyzable organosilane of Formula (1), wherein, at least one group among R1, R2, and R3 is a group wherein a &#x2014;Si(X)3 group bonds to C1-10 alkylene group, and other group(s) among R1, R2, and R3 is(are) a hydrogen atom, C1-10 alkyl group, or C6-40 aryl group; a cyclic organic group of 5-10 membered ring containing atoms making up the ring, a carbon atom, at least one of nitrogen, sulfur or oxygen atoms; and X is an alkoxy group, acyloxy group, or halogen atom. 

Resist underlayer film forming composition containing silicon containing cyclic organic group having hetero atom

There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising: a hydrolyzable organosilane having a urea group; a hydrolysis product thereof; or a hydrolysis-condensation product thereof. The hydrolyzable organosilane is for example a compound of Formula (1): where at least one of three groups T, T, and Tis a group of Formula (2): 

Silicon-containing resist underlayer film forming composition having urea group

A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1):[(R)Si(R)](R)&#x2003;&#x2003;Formula (1)[in Formula (1), Ris an organic group having a sulfonyl group and a light-absorbing group and is bonded to a Si atom through a Si&#x2014;C bond; Ris an alkyl, aryl, aralkyl, halogenated alkyl, halogenated aryl, halogenated aralkyl, alkenyl, an organic group having an epoxy, acryloyl, methacryloyl, mercapto, alkoxyaryl, acyloxyaryl, isocyanurate, hydroxy, cyclic amino, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si&#x2014;C bond; Ris an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3].

Silicon-containing resist underlayer film-forming composition having sulfone structure

A resist underlayer film forming composition for lithography, including: as a silane, at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes the silane compound of Formula (1-a) or Formula (1-b): A method for producing a semiconductor device, including: applying the resist underlayer film forming composition onto a semiconductor substrate and baking the composition to form a resist underlayer film; applying a composition for a resist onto the film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a patterned resist film; etching the resist underlayer film according to a pattern of the patterned resist film; and processing the semiconductor substrate according to a pattern of the resist film and the resist underlayer film.

Resist underlayer film forming composition containing silicon having sulfone structure and amine structure

A composition for forming a lithographic resist underlayer film, including, as a silane, a hydrolyzable organosilane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the silane includes a hydrolyzable organosilane of Formula (1) below:[(R)Si(R)](R)&#x2003;&#x2003;Formula (1)[where Ris a group of Formula (2), (3), or (4): (in Formulae (2), (3), and (4), at least one from among R, R, and Ris a group bonded to a silicon atom directly or through a linking group.), Ris an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof, Ris an alkoxy group, an acyloxy group, or a halogen atom].

Composition for forming resist underlayer film, containing silicon that bears diketone-structure-containing organic group

A resist underlayer film that can be used as a hardmask. A resist underlayer film forming composition for lithography, includes: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in a content of less than 50% by mole in all silanes; Formula (1): RRSi(R)wherein Ris an organic group containing Formula (1-1), Formula (1-2), or Formula (1-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3;Formula (2): RRSi(R)wherein, Ris an organic group containing Formula (2-1), Formula (2-2), or Formula (2-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3.

Composition for forming silicon-containing resist underlayer film having cyclic diester group

There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask; and a forming method of a resist pattern using the underlayer film forming composition for lithography. A resist underlayer film forming composition for lithography comprising: as a silicon atom-containing compound, a hydrolyzable organosilane containing a sulfur atom-containing group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein in the whole silicon atom-containing compound, the ratio of a sulfur atom to a silicon atom is less than 5% by mole. The hydrolyzable organosilane is preferably a compound of Formula (1): [RSi(R)]Rwherein Rhas a partial structure of Formula (2): R&#x2014;S&#x2014;R.

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Toyama, Japan

Yuta Kanno