Az Electronic Materials USA Corp.

Other

Dainippon Ink and Chemicals, Incorporated

Clariant Finance (bvi) Limited

Az Electronic Materials (japan) K.k.

Electronic Materials USA Corp.

Yusuke Takano

Hatsuyuki Tanaka

Yasushi Akiyama

Jin Li

Kiyohisa Takahashi

Go Noya

Kiyofumi Takano

Tetsuo Okayasu

Satoru Funato

Sung-Eun Hong

Kazunori Kurosawa

Ralph R Dammel

Munirathna Padmanaban

Yutaka Hashimoto

David J Abdallah

Sung Eun Hong

Katsutoshi Kuramoto

Tomonori Ishikawa

Takeshi Nishibe

Jirou Matsuo

Kazuyo Ijima

Yoshio Murakami

Kazuyo Ono

Toru Koike

Dong Han Lee

There are provided a composition for forming a superfine pattern and a method employing the same for forming a superfine pattern. The composition enables to simply produce a superfine pattern with high mass productivity. The composition comprises perhydropolysilazane (I), silicon-containing polymer (II) having a hydrocarbon group, and a solvent. The mixture of those polymers contains silicon-hydrogen bonds and silicon-hydrocarbon group bonds in such amounts that the number of the silicon-hydrocarbon group bonds is in a ratio of 1 to 44% based on the total number of the silicon-hydrogen bonds and the silicon-hydrocarbon group bonds. The composition is applied on a resist pattern to form a spacer formed of the composition on the side wall of the ridges in the pattern, and then the spacer or a resin layer disposed around the spacer is used as a mask to form a superfine pattern.

Superfine pattern mask, method for production thereof, and method employing the same for forming superfine pattern

Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R, R, R, and Rrepresents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and Xrepresents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount. 

Composition for formation of top antireflective film, and pattern formation method using the composition

There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity. The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.

Superfine-patterned mask, method for production thereof, and method employing the same for forming superfine-pattern

The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present. The invention further relates to a product of the above process and to a microelectronic device made from using the above process.

Hardmask process for forming a reverse tone image using polysilazane

The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a Cto Calkanolamine salt of Cto Cperfluoroalkylcarboxylic acid, Cto Cperfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 &#x212b; to 600 &#x212b;, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

Process for preventing development defect and composition for use in the same

In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.

Water soluble resin composition and method for pattern formation using the same

In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.

Method for fine pattern formation

The object of the present invention is to provide an anti-reflective coating composition having excellent coating properties while maintaining performance as an anti-reflective film. An anti-reflective coating composition comprising at least the following components (A), (B), (C), (D), and (E) and a production method for a pattern using the anti-reflective coating composition, (A) perfluoroalkyl&#x2022;alkylenesulfonic acid represented by the following formula (1): CF(CHCH)SOH (1) (wherein, n represents an integer from 1 to 20, and m represents an integer from 0 to 20); (B) organic amine; (C) water-soluble polymer; (D) perfluoroalkylethyl group containing compound represented by the following formula (2): CFCHCH&#x2014;X&#x2014;Y (2) (wherein, k represents an integer from 1 to 20, x represents a single bond or a divalent linking group, y represents an anionic group or a nonionic group, and this compound has a structure different from that of the component (A)); and (E) water.

Anti-reflective coating composition and production method for pattern using the same

In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.

Material for forming fine pattern and method for forming fine pattern using the same

An anti-reflective coating film is formed by applying on a chemically amplified photoresist film an anti-reflective coating composition comprising an alkali-soluble fluorine-containing polymer, an acid, an amine and a solvent capable of dissolving these components and having a pH of 7 or less. The formed anti-reflective coating film can serve to prevent multiple reflections within the photoresist film, increase the amount of reduction in thickness of the photoresist film upon development with a developer after exposure, and form a pattern having a rectangular cross-sectional pattern and not having T-top or round top.

Composition for antireflection coating and method for forming pattern

A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist patternformed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrateto form a coated layerthereon. The resist patternand the coated layerare heat-treated to form a developer-insoluble modified coated layerin the vicinity of a surface of the resist pattern. The coated layer is developed and the resist pattern thickened by the modified layeris formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition. As a result, a separation size and a hole aperture size of the resist pattern are reduced effectively to less than a limit resolution. As the modified layerhas a function of a protecting film for the resist pattern upon electron beam irradiation, a size measurement fluctuation of a resist pattern upon electron beam irradiation by a size measuring SEM can be prevented.

Water soluble resin composition, method of pattern formation and method of inspecting resist pattern

A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 &#x212b; to 500 &#x212b; in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.

Development defect preventing process and material

A method of forming resist patterns comprises the steps of (a) applying and forming a chemically amplified photoresist film, (b) applying a treating agent with a pH value of 1.3 to 4.5 onto said chemically amplified photoresist film, (c) baking said chemically amplified photoresist film after at least one of the steps of applying and forming said chemically amplified photoresist film and applying said treating agent, (d) selectively exposing said chemically amplified photoresist film, (e) post exposure-baking said chemically amplified photoresist film, and (f) developing said chemically amplified photoresist film, wherein the contact angle of a non-exposed portion of said chemically amplified photoresist film to a developing solution after wash with water to remove the treating agent on the photoresist and spin-drying before development is made lower by 10&#xb0; to 110&#xb0; than that in the case where said treating agent is not applied. In this method, the wetting property of the developing solution to the photoresist film are improved and the influence of floating basic species are reduced by the action of an acid component such as organic acid contained in the treating agent to form resist patterns with good shape.

Method for forming pattern and treating agent for use therein

A resist pattern having a good form without any T-top or round top is obtained by coating on a photoresist layer an anti-reflective coating composition containing at least (a) polyacrylic acid, (b) polyvinyl pyrrolidone, (c) C F COOOH (wherein n represents an integer of 3 to 11) and (d) tetramethylammonium hydroxide to form an anti-reflective coating, and conducting patternwise exposure and development.

Composition for antireflection coating

The anti-reflective coating composition comprising at least perfluoroalkylsulfonic acid (A) represented by the general formula: C,F,SO,H (n is an integer of 4 to 8), organic amine (B), water-soluble polymer (C), perfluoroalkyl sulfonamide (D) represented by the general formula: C,F,SO,NH,(n is an integer of 1 to 8) and water (E) and having a pH value of 1.3 to 3.3 is applied onto a photoresist film formed on a substrate, thus forming an anti-reflective coating. The photoresist and anti-reflective coating are then exposed to light and developed to give a resist pattern. The coating composition can form a uniform anti-reflective coating free of standing wave, multiple reflection, T-top and PED (Post Exposure Delay) in a small amount of drip onto any types of resists regardless of the surface shape of a substrate.

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Kakegawa, Japan

Yusuke Takano