Tokyo Electron Limited

Yusuke Suzuki

Munehito Kagaya

Tadashi Mitsunari

Shinya Iwashita

Tsuyoshi Moriya

Kazuhide Hasebe

Satoshi Tanaka

Jun Ogawa

Satoru Kawakami

Atsushi Endo

Atsushi Gomi

Yasuhiko Kojima

Hiroshi Sone

Kentaro Oshimo

Hideomi Hane

Takeshi Oyama

Tatsuo Hirasawa

Kanto Nakamura

Chiaki Yasumuro

Koichi Takatsuki

Yasunobu Suzuki

Atsushi Shimada

Toru Kitada

Keisuke Sato

Yuji Otsuki

There is provided a film forming method of forming a film in a recess formed on a surface of a substrate. The film forming method includes: forming an adsorption-inhibiting region by supplying an adsorption-inhibiting gas to the substrate; adsorbing a silicon-containing gas to a region other than the adsorption-inhibiting region by supplying the silicon-containing gas to the substrate; and forming a silicon nitride film by exposing the substrate to a nitrogen-containing gas so that the nitrogen-containing gas reacts with the adsorbed silicon-containing gas, wherein the adsorbing the silicon-containing gas includes controlling a dose amount of the silicon-containing gas to be supplied to be equal to or greater than an adsorption saturation amount of the silicon-containing gas to be adsorbed on the substrate on which no adsorption-inhibiting region is formed.

Film forming method and film forming apparatus

A recess filling method includes a combined process including a film formation process of forming a film in recesses formed on the surface of a substrate and having different aspect ratios, and an etching process of etching the film formed in the recesses; and a repetition process of repeating the combined process n times (n is a natural number of 2 or more), wherein the repetition process includes: a first combined process of performing the etching process with a first etching amount suitable for filling, with the film, a first recess having a first aspect ratio; and a second combined process of performing the etching process with a second etching amount that is smaller than the first etching amount and is suitable for filling, with the film, a second recess having a second aspect ratio lower than the first aspect ratio.

Recess filling method and substrate processing apparatus

A film forming method is provided. In the film forming method, a mask is prepared based on a measurement result of a surface state of a substrate. The mask is transferred into a process chamber and the substrate is transferred into the process chamber. Then, a film is formed on a back surface of the substrate while the mask is disposed onto the back surface of the substrate.

Film forming method and semiconductor production apparatus

In a plasma processing apparatus, a processing chamber is provided. First electrodes are disposed inside the processing chamber and supplied with radio frequency powers. The second electrode is disposed inside the processing chamber and functions as a counter electrode for the first electrodes. The power supply source supplies radio frequency powers to the first electrodes to generate plasma between the first electrodes and the second electrode and process a target object using the plasma. The allocation setting unit is disposed between the power supply source and at least one of the first electrodes to set power allocations of the radio frequency powers to be supplied to the first electrodes. Further, the allocation setting unit has series circuits in each of which an impedance circuit and a switching element are connected in series. The series circuits are connected in parallel. The control device controls the switching elements in the series circuits.

Plasma processing apparatus and plasma processing method

A SiN film embedding method includes: an operation of adsorbing an aminosilane-based precursor inside a recess formed on a surface of a substrate; an operation of forming a SiN film inside the recess by plasmarizing and supplying a nitrogen gas into the recess to nitride the aminosilane-based precursor; and an operation of forming an adsorption-inhibiting region for the aminosilane-based precursor on an upper portion inside the recess by plasmarizing and supplying a non-halogen gas substantially more to the upper portion than a lower portion inside the recess.

SiN film embedding method

When a titanium-containing gas and an oxidizing gas, or a silicon-containing gas and a nitriding gas, are alternately supplied from a gas supplier and radio frequency power is supplied to each of a first electrode and a second electrode from a power supply, parallel to the supply of the oxidizing gas or the nitriding gas, so as to generate plasma and to perform a film formation, a magnitude of the radio frequency power to be supplied to each of the first electrode and the second electrode is controlled.

Film forming apparatus and film forming method

A film forming method includes: a first measurement process of measuring a substrate on which a pattern including recesses is formed using infrared spectroscopy; a film formation process of forming a film on the substrate after the first measurement process; a second measurement process of measuring the substrate using infrared spectroscopy after the film formation process; and an extraction process of extracting difference data between measurement data obtained in the first measurement process and measurement data obtained in the second measurement process.

A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.

Processing method

A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Deposition device and deposition method

A film forming apparatus includes a processing chamber, a gas supply unit, a stage, at least one holder, a power supply, at least one magnet and a magnet rotation unit. The gas supply unit is configured to supply a gas into the processing chamber. The stage is provided in the processing chamber, and has a center coinciding with a central axis which extends in a vertical direction. The stage is configured to cool the object to about &#x2212;50&#xb0; C. or below. Each holder is configured to hold a target, and extends in an annular shape above the stage inside the processing chamber. The power supply is configured to generate a voltage to be applied to the target. Each magnet is provided outside the processing chamber and faces the target. The magnet rotation unit is configured to rotate the magnet about the central axis.

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Nirasaki, Japan

Yusuke Suzuki