Tokyo Electron Limited

Yusuke Shimizu

Masahiko Takahashi

Eiichi Nishimura

Akinori Kitamura

Toshihisa Ozu

Michihisa Takachi

According to an exemplary embodiment, a method includes preparing a workpiece including a silicon film and a mask provided on the silicon film, etching the silicon film using the mask by plasma of a gas containing a first halogen atom, modifying a surface of the silicon film into an oxide layer by plasma of a gas containing an oxygen atom, a hydrogen atom, and a second halogen atom, the oxide layer including a first region extending along a side wall surface of the mask and a second region extending on the silicon film, etching the oxide layer to remove the second region while leaving the first region, and etching the silicon film using the mask and the oxide layer including the first region by plasma of a gas containing a third halogen atom.

Etching method and plasma treatment device

An etching method includes loading, first and second supplying, removing and etching steps. In the loading step, a target object is loaded into a chamber. In the first supply step, a first gas containing carbon, hydrogen and fluorine is supplied into the chamber. In the modification step, plasma of the first gas is generated to modify a surface of a mask film and a surface of an organic film which is not covered with the mask film. In the second supply step, a second gas for etching the organic film is supplied into the chamber. In the removal step, a modified layer formed on the surface of the organic film is removed by applying a first high frequency bias power. In the etching step, the organic film below the modified layer is etched by applying a second high frequency bias power lower than the first high frequency bias power.

Etching method and etching apparatus

A method for processing a resist mask includes: (a) a step of preparing, in a processing chamber, a target object to be processed having a patterned resist mask provided thereon; and (b) a step of generating a plasma of the hydrogen-containing gas by supplying a hydrogen-containing gas and supplying a microwave into the processing chamber. The hydrogen-containing gas may be, e.g., Hgas.

Resist mask processing method using hydrogen containing plasma

A dry etching method for a silicon nitride film capable of improving throughput is provided. A dry etching method for dry-etching a silicon nitride filmincludes dry-etching the silicon nitride filmwithout generating plasma by using a processing gas containing at least a hydrogen fluoride gas (HF gas) and a fluorine gas (Fgas), with respect to a processing target objectincluding the silicon nitride film

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Miyagi, Japan

Yusuke Shimizu