Tokyo Electron Limited

Yusuke Ohsawa

Ryuichi Asako

Toshihisa Nozawa

Kaushik Arun Kumar

Eiji Suzuki

Andrew W Metz

Takaaki Matsuoka

Hiroto Ohtake

Hirokazu Ueda

Yoshinobu Tanaka

A method of etching an aluminum-containing layer on a substrate is described. The method includes forming plasma from a process composition containing a halogen element, and exposing the substrate to the plasma to etch the aluminum-containing layer. The method may additionally include exposing the substrate to an oxygen-containing environment to oxidize a surface of the aluminum-containing layer and control an etch rate of the aluminum-containing layer. The method may further include forming first plasma from a process composition containing HBr and an additive gas having the chemical formula CHR(wherein R is a halogen element, x and y are equal to unity or greater, and z is equal to zero or greater), forming second plasma from a process composition containing HBr, and exposing the substrate to the first plasma and the second plasma to etch the aluminum-containing layer.

Dry metal etching method

A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber () of a plasma processing apparatus (). A microwave is supplied into the chamber (), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial pressure ratio of the rare gas is 10% or more of a total gas pressure of the silicon compound gas, the oxidizing gas, and the rare gas, and an effective flow ratio of the silicon compound gas and the oxidizing gas (oxidizing gas/silicon compound gas) is not less than 3 but not more than 11.

Film forming method of silicon oxide film, silicon oxide film, semiconductor device, and manufacturing method of semiconductor device

There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults. A damaged functional group generated in a surface of the low dielectric insulating film by a processing is substituted with a hydrophobic functional group (ST.). A damaged component present under a dense layer generated in the surface of the low dielectric insulating film by the substitution process is recovered by using an ultraviolet heating process (ST.).

Method for recovering damaged components in lower region of low dielectric insulating film

Method for recovering damage of low dielectric insulating film for manufacturing semiconductor device

Growing community of inventors

Tokyo, Japan

Yusuke Ohsawa