Tokyo Electron Limited

Other

Kabushiki Kaisha Toshiba

Yusuke Hirayama

Masaki Hirayama

Koji Maruyama

Shu Kusano

Haruyuki Takano

Tadahiro Ohmi

Masaaki Miyagawa

Kazuhito Tohnoe

Kazuya Nagaseki

Tokuhisa Ohiwa

Masashi Saito

Itsuko Sakai

Takanori Mimura

Shuichiro Uda

Hideyuki Hatoh

Nozomi Hirai

Yasuyoshi Ishiyama

Wataru Hashizume

Katsuyuki Ono

An inspection method is provided. The inspection method includes monitoring power of a reflected wave of a power wave supplied from a source power supply for generation of plasma in a plasma processing apparatus, and obtaining a fluctuation amount of a measured value within a period after initiation of the supply of the power wave. The fluctuation amount of the measured value is a fluctuation amount indicating a fluctuation in a peak-to-peak voltage at a lower electrode of the substrate support in the chamber or a fluctuation amount indicating a fluctuation in impedance of a load including the lower electrode.

Inspection method and plasma processing apparatus

There is provision of a plasma processing apparatus including a chamber; a gas inlet for supplying a first gas containing fluorine and supplying a second gas into the chamber; a plasma generator configured to generate a plasma from the first gas and the second gas supplied into the chamber; an optical emission spectrometer (OES) configured to measure light emission intensities of first radicals and second radicals in the plasma, the first radicals originating from the first gas, the second radicals originating from the second gas; an expendable part disposed in the chamber; and a processor configured to determine a wastage rate of the expendable part based on the measured light emission intensities of the first radicals and the second radicals.

Wastage determination method and plasma processing apparatus

There is provision of a method of determining wastage including: processing a substrate using a plasma generated by multiple gases including fluorine gas; obtaining light emission intensity of each gas of the multiple gases including fluorine gas from the plasma, by an optical emission spectrometer (OES); and calculating a wastage rate of a particular expendable part from the obtained light emission intensity of each gas of the multiple gases including fluorine gas, with reference to a storage section storing a wastage rate of the particular expendable part in association with the light emission intensity of each gas of the multiple gases including fluorine gas.

A plasma processing method including: a film formation step of forming a silicon-containing film on a surface of a member inside a chamber by plasma of a silicon-containing gas and a reducing gas; a plasma processing step of plasma-processing a workpiece carried into the chamber by plasma of a processing gas after the silicon-containing film is formed on the surface of the member; and a removal step of removing the silicon-containing film from the surface of the member by plasma of a fluorine-containing gas after the plasma-processed workpiece is carried out of the chamber.

Plasma processing method and plasma processing apparatus

This plasma processing method includes a film formation step, a plasma processing step and a removal step. In the film formation step, a silicon oxide film is formed on the surface of a member within a chamber by means of plasma of an oxygen-containing gas and a silicon-containing gas at a flow rate ratio of the oxygen-containing gas to the silicon-containing gas of 0.2-1.4. In the plasma processing step, after the formation of the silicon oxide film on the surface of the member, an object to be processed that has been carried into the chamber is subjected to plasma processing with use of plasma of a processing gas. In the removal step, after carrying the plasma-processed object out of the chamber, the silicon oxide film is removed from the surface of the member by means of plasma of a fluorine-containing gas.

There is provided a plasma etching method including a first process of etching an intermediate layer, which contains silicon and nitrogen and is positioned below a resist mask formed on a surface of a substrate, to cause a silicon layer positioned below the intermediate layer to be exposed through the resist mask and the intermediate layer, a second process of subsequently supplying a chlorine gas to the substrate to cause a reaction product to attach onto sidewalls of opening portions of the resist mask and the intermediate layer, and a third process of etching a portion of the silicon layer corresponding to the opening portion of the intermediate layer using a process gas containing sulfur and fluorine to form a recess in the silicon layer.

Plasma etching method

A plasma etching method is provided for forming a hole using a first processing gas to etch a silicon layer of a substrate to be processed including a silicon oxide film that is formed into a predetermined pattern. The method includes a first depositing step (S) of depositing a protective film on a surface of the silicon oxide film using a second processing gas containing carbon monoxide gas, a first etching step (S) of etching the silicon layer using the first processing gas, a second depositing step (S) of depositing the protective film on a side wall of a hole etched by the first etching step using the second processing gas, and a second etching step (S) of further etching the silicon layer using the first processing gas. The second depositing step (S) and the second etching step (S) are alternately repeated at least two times each.

A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.

Substrate processing apparatus and method, and program and storage medium

A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiFand Owith the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF, O, and HBr after the first etching step.

Method for manufacturing semiconductor device

Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: forming a hole in a substrate; forming a polyimide film within the hole; anisotropically etching the substrate without using a mask covering a sidewall portion of the polyimide film within the hole and removing at least a part of a bottom portion of the polyimide film within the hole while the sidewall portion of the polyimide film remains within the hole; and filling the hole with a conductive metal.

Method for manufacturing semiconductor device using anisotropic etching

A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.

Plasma processing apparatus and plasma processing method

A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

Plasma etching device

A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a ceiling portion, there being formed a plasma processing space between the mounting table and the ceiling portion, includes the steps of mounting a target object on the mounting table, setting a gap between the ceiling portion and the mounting table to be greater than about 25 mm and less than about 65 mm, and performing a plasma processing on the target object by generating a plasma in the processing space. The target object includes an opening pattern having openings and at least parts of the openings are equal to or greater than about 500 &#x3bc;m.

Plasma processing method and high-rate plasma etching apparatus

In order to facilitate control of a circulating gas, in a processing apparatushaving a showerheadfor supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pumpfor evacuating the processing gas from the processing chamberand a circulating gas pipingfor returning at least a portion (circulating gas Q) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Qsupplied from a gas sourceinto the processing chamber via a plurality of primary gas outlet holes hand a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.

Processing method for conservation of processing gases

An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and Obut not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, Oand HBr.

Growing community of inventors

Miyagi, Japan

Yusuke Hirayama