Hitachi High-tech Corporation

Hitachi-high-technologies Corporation

Nagano Keiki Co., Ltd.

Toshiba Lifestyle Products & Services Corporation

Other

Hitachi, Ltd.

Japanese Foundation for Cancer Research

Yusuke Abe

Kenji Tanimoto

Shuji Tohyama

Haruhiko Sekiya

Yusuke Nakamura

Hitoshi Suzuki

Hiroya Ohta

Kaori Bizen

Yasunari Sohda

Takuma Yamamoto

Takeyoshi Ohashi

Makoto Suzuki

Hironori Kobayashi

Toshiyuki Yokosuka

Masaaki Nojiri

Hirohiko Kitsuki

Kenji Yasui

Hyejin Kim

Naoko Shinagawa

Hideyuki Kazumi

Yoshinori Nakayama

Satoru Yamaguchi

Masatoshi Tanaka

Daisuke Bizen

Yukio Machida

Mayuka Osaki

Takayoshi Shimizu

Tomohiro Tamori

Fumiki Mano

Makoto Sakakibara

Kei Sakai

Michio Hatano

Tomomichi Ito

Yasunori Goto

Zhigang Wang

Keiichiro Hitomi

Masahiro Taniguchi

Toru Hirota

Yuuji Ohtsuka

Akihiro Ishizawa

Shuuichirou Takahashi

Masamichi Une

Shigenori Oinuma

A computation device is provided for measuring the dimensions of patterns formed on a sample based on a signal obtained from a charged particle beam device. The computation device includes a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights based on an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

Pattern measurement device and pattern measurement method

An object of the invention is to acquire a high-quality image while maintaining an improvement in throughput of image acquisition (measurement (length measurement)). The present disclosure provides a charged particle beam system including a charged particle beam device and a computer system configured to control the charged particle beam device. The charged particle beam device includes an objective lens, a sample stage, and a backscattered electron detector that is disposed between the objective lens and the sample stage and that adjusts a focus of a charged particle beam with which a sample is irradiated. The computer system adjusts a value of an electric field on the sample in accordance with a change in a voltage applied to the backscattered electron detector.

Charged particle beam system

When focus adjustment is performed according to the height of the surface of a sample at each inspection point in order to continuously inspect a plurality of inspection points on a wafer by using an electron microscope, even when the focus adjustment by an electrostatic lens in which a variation of heights of inspection points is greater than a predetermined range, and that can perform adjustment at a high speed and adjustment by an electromagnetic lens with a low speed are required to be used together, a flow of focus adjustment in which the number of times of the adjustment by the electromagnetic lens is reduced by using a relation of changes of heights at inspection points, an inspection order, and a range in which an electrostatic focus can be performed is realized, so that inspection with high throughput is made possible.

Electron microscope and method of adjusting focus of electron microscope

Provided is a charged particle beam device capable of focusing with high accuracy even when a charged particle beam has a large off-axis amount. The charged particle beam device generates an observation image of a sample by irradiating the sample with a charged particle beam, and includes: a deflection unit that inclines the charged particle beam; a focusing lens that focuses the charged particle beam; an adjustment unit that adjusts a lens strength of the focusing lens based on an evaluation value calculated from the observation image; a storage unit that stores a relationship between a visual field movement amount and the lens strength; and a filter setting unit that calculates the visual field movement amount based on an inclination angle of the charged particle beam and the relationship, and sets an image filter to be superimposed on the observation image based on the calculated visual field movement amount.

Charged particle beam device

To implement a calibration sample by which an incident angle can be measured with high accuracy, an electron beam adjustment method, and an electron beam apparatus using the calibration sample. To adjust an electron beam using a calibration sample, the calibration sample includes a silicon single crystal substratewhose upper surface is a {110} plane, a first recess structureopening in the upper surface and extending in a first direction, and a second recess structureopening in the upper surface and extending in a second direction intersecting the first direction, in which the first recess structure and the second recess structure each include a first side surface and a first bottom surface that intersects the first side surface, and a second side surface and a second bottom surface that intersects the second side surface, the first side surface and the second side surface are {111} planes, and the first bottom surface and the second bottom surface are crystal planes different from the {110} planes.

Calibration sample, electron beam adjustment method and electron beam apparatus using same

The present invention has a computation device for measuring the dimensions of patterns formed on a sample on the basis of a signal obtained from a charged particle beam device. The computation device has a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights on the basis of an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

The inventors have found that the interaction between HP1 and INCENP can serve as an indicator for chromosome instability and established a method for evaluating chromosome instability of cancer cells. The evaluation system can be used for screening of anticancer agent with a new-concept of targeting chromosome instability of cancer cells. The inventors further prepared an antibody for specifically recognizing phosphorylation of serine at position 92 of HP1&#x3b1;, by which the action of Aurora B can be evaluated. The interaction between HP1 and INCENP can be readily evaluated by the antibody.

Screening method of anticancer agent focused on function of HP1 and evaluation system

A vacuum cleaner includes a main body portion, a secondary battery, an electric blower, a handle and a conductive member. The secondary battery is disposed in the main body portion. The electric blower operates by electric power supply from the secondary battery. The handle is one which a user contacts when the vacuum cleaner is used. At least a part of the conductive member is disposed at the handle and conducts static electricity generated due to operation of the electric blower.

Electrical equipment using battery as power supply and vacuum cleaner

A physical quantity measuring device includes: a metallic cylindrical case; a sensor module configured to detect a physical quantity; a synthetic-resin joint provided near a first open end of the cylindrical case, the joint being attached with the sensor module and provided with an introduction port for introducing a measurement target fluid; and a cover provided near a second open end of the cylindrical case. The cover includes a locking portion for locking the sensor module. The cylindrical case includes an engagement portion provided near the first open end and engaged with the joint and a crimp portion provided near the second open end, the crimp portion configured to be plastically deformed by crimping. The cover is attached to the cylindrical case by crimping the crimp portion.

Physical quantity measurement including improved corrosion protection

A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.

Scanning electron microscope and method for measuring pattern

Provided is a scanning electron microscope which can perform high-speed focus correction even when an electron beam having high energy is used. The scanning electron microscope includes an electron optical system including an electron sourcethat emits an electron beam and an objective lens, a sample stagewhich is disposed on a stageand on which a sampleis placed, a backscattered electron detectorwhich is disposed between the objective lens and the sample stage and is configured to detect backscattered electronsemitted due to interaction between the electron beam and the sample, a backscattered electron detection system control unitwhich is provided corresponding to the backscattered electron detector and is configured to apply a voltage to the backscattered electron detector, and a device control calculation device. The objective lens has an opening in a stage direction, and the device control calculation device performs focus correction of the electron beam by controlling the voltage applied to the backscattered electron detector from the backscattered electron detection system control unit.

Scanning electron microscope

The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.

Pattern cross-sectional shape estimation system and program

To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information in advance, an electron microscope detects, among emitted electrons generated by irradiating a sample with a primary electron beam, an emission angle in a predetermined range, the emission angle being formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons, and outputs a detection signal corresponding to the number of the emitted electrons detected. An emission angle distribution of a detection signal is obtained based on a plurality of detection signals, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being based on an optical axis direction of the primary electron beam with respect to the bottom portion of the three-dimensional structure.

Scanning electron microscope and calculation method for three-dimensional structure depth

A vacuum cleaner is provided with a cleaner main body having an electric blower and a handle. The handle is shaped such that a gravity center position of the cleaner main body remains substantially unchanged in a state in which any one region is gripped.

Vacuum cleaner

There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis.

Charged particle beam apparatus

Growing community of inventors

Tokyo, Japan

Yusuke Abe