Jsr Corporation

Yushi Matsumura

Satoru Murakami

Kyoyu Yasuda

Kazuhiko Komura

Shin-ya Minegishi

Shinya Nakafuji

Makoto Sugiura

Yusuke Anno

Takanori Nakano

Shinya Minegishi

Takashi Mori

Kazunori Takanashi

Shin-ya Nakafuji

Yoshio Takimoto

Satoshi Dei

A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.

Polysiloxane composition and pattern-forming method

Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.

Pattern-forming method, and composition for forming resist underlayer film

A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of Rto Rindependently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of Rto Rrepresents the group shown by the formula (2). 

Resist underlayer film-forming composition and method for forming pattern

A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Pattern-forming method, resist underlayer film, and composition for forming resist underlayer film

A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of Rto Rindividually represent a group shown by the following formula (2) or the like. Rrepresents a single bond or the like. Rrepresents a hydrogen atom or the like. 

Resist underlayer film-forming composition

A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein Rto Rindividually represent a group shown by the following formula (2) or the like,&#x2014;O&#x2014;R&#x2261;R&#x2003;&#x2003;(2)wherein Rrepresents a single bond or the like, and Rrepresents a hydrogen atom or the like.

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Tokyo, Japan

Yushi Matsumura