Denka Company Limited

Denki Kagaku Kogyo Kabushiki Kaisha

University of Yamanashi

Yusaku Harada

Takahiro Nakamura

Takeshi Miyakawa

Yuji Koga

Kouji Nishimura

Akimasa Yuasa

Shuhei Morita

Makoto Uchida

Katsuyoshi Kakinuma

Takeshi Gotoh

Ryota Aono

Yuta Tsugawa

Daiki Ikeda

Katsunori Terano

Shoji Iwakiri

A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, wherein a ceramic substrate and a copper plate are bonded by a braze material containing Ag and Cu, at least one active metal component selected from Ti and Zr, and at least one element selected from among In, Zn, Cd, and Sn, wherein a braze material layer, after bonding, has a continuity ratio of 80% or higher and a Vickers hardness of 60 to 85 Hv.

Ceramic circuit board and module using same

A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, having a circuit pattern provided on a ceramic substrate with a braze material layer interposed therebetween, and a protruding portion formed by the braze material layer protruding from the outer edge of the circuit pattern, wherein: the braze material layer includes Ag, Cu, Ti, and Sn or In; and an Ag-rich phase is formed continuously for 300 &#x3bc;m or more, towards the inside, from an outer edge of the protruding portion, along a bonding interface between the ceramic substrate and the circuit pattern, and has a bonding void ratio of 1.0% or less.

Ceramic circuit board and production method therefor

A ceramic circuit substrate and power module with excellent heat cycle resistance characteristics, which is formed by bonding a ceramic substrate and a copper plate via a brazing material including Ag, Cu, and an active metal, wherein the bond void fraction is no greater than 1.0% and the diffusion distance of the Ag, which is a brazing material component, is 5-20 &#x3bc;m. Also, a method for manufacturing a ceramic circuit substrate characterized in that the heating time in a temperature range 400-700&#xb0; C. in a process for raising the temperature to a bonding temperature is 5-30 minutes and bonding is performed by maintaining the bonding temperature at 720-800&#xb0; C. for 5-30 minutes.

Ceramic circuit board, method for manufacturing ceramic circuit board, and module using ceramic circuit board

An electrode catalyst support, capable of improving the power of a fuel cell, and an electrode catalyst and a solid polymer fuel cell using the same. Provided is carbon black wherein pores which are at most 6 nm in pore diameter have a cumulative pore volume of less than 0.25 cm/g, a specific surface area by BET is 500 to 900 m/g, and a volatile matter content is 1.0 to 10.0%. Also provided are an electrode catalyst for a fuel cell comprising a support which includes this carbon black, and a solid polymer fuel cell having the electrode catalyst.

Carbon black, electrode catalyst and fuel cell using same, and method for producing carbon black

A ceramic circuit substrate having a metal plate bonded, by a bonding braze material, to at least one main surface of a ceramic substrate, wherein the bonding braze material contains, as metal components, 0.5 to 4.0 parts by mass of at least one active metal selected from among titanium, zirconium, hafnium, and niobium, with respect to 100 parts by mass, in total, of 93.0 to 99.4 parts by mass of Ag, 0.1 to 5.0 parts by mass of Cu, and 0.5 to 2.0 parts by mass of Sn; and Cu-rich phases in a bonding braze material layer structure between the ceramic substrate and the metal plate have an average size of 3.5 &#x3bc;m or less and a number density of 0.015/&#x3bc;m2 or higher. A method for producing a ceramic circuit substrate includes bonding at a temperature of 855 to 900&#xb0; C. for a retention time of 10 to 60 minutes.

Ceramic circuit board and method for producing same

Disclosed is an aluminum nitride substrate for a circuit board, the substrate having aluminum nitride crystal grains with an average grain size of 2 to 5 &#x3bc;m and a thermal conductivity of at least 170 W/m&#xb7;K. The aluminum nitride substrate does not include a dendritic grain boundary phase and has a breakdown voltage of at least 30 kV/mm at 400&#xb0; C. Also provided is a method for producing the aluminum nitride substrate, including the steps of heating a raw material containing an aluminum nitride powder to 1500&#xb0; C. at a pressure of at most 150 Pa, then increasing and holding the temperature at 1700 to 1900&#xb0; C. in a pressurized atmosphere of at least 0.4 MPa using a non-oxidizing gas, then cooling to 1600&#xb0; C. at a cooling rate of at most 10&#xb0; C./min.

Aluminum nitride substrate for circuit board and production method thereof

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Omuta, Japan

Yusaku Harada