Kla Tencor Corporation

Kla Corporation

Yury Yuditsky

Anatoly Romanovsky

Mehdi Vaez-Iravani

Guoheng Zhao

Stephen Biellak

Daniel Ivanov Kavaldjiev

Ivan Maleev

Dirk Woll

Zhiwei Xu

Alexander Slobodov

Yung-Ho Alex Chuang

David Lee Brown

Zhongping Cai

Frank Li

Mandar Paranjape

Yifeng Cui

Timothy Swisher

Kwan Auyeung

Steven Biellak

A semiconductor wafer is inspected using a main laser beam and a secondary laser beam. The secondary laser beam leads the main laser beam and has lower power than the main laser beam. Using the secondary laser beam, a particle is detected on the semiconductor wafer having a size that satisfies a threshold. In response to detecting the particle, the power of the main laser beam and the power of the secondary laser beam are reduced. The particle passes through the main laser beam with the main laser beam at reduced power. After the particle has passed through the main laser beam with the main laser beam at the reduced power, the power of the main laser beam and the power of the secondary laser beam are restored in a controlled manner that is slower than a single step.

Large-particle monitoring with laser power control for defect inspection

A system includes a beam steering assembly configured to adjust an incident beam to form a corrected beam; a beam monitoring assembly configured to generate monitoring data for the corrected beam including one or more offset parameters of the corrected beam; and a controller configured to store one or more zero parameters of the corrected beam, calculate at least one difference between the one or more zero parameters and the one or more offset parameters of the corrected beam, determine one or more beam position adjustments of the incident beam based on the at least one difference between the one or more zero parameters and the one or more offset parameters of the corrected beam, and direct the beam steering assembly via one or more motor drivers to actuate one or more motors to adjust the incident beam to form the corrected beam.

System and method for compensation of illumination beam misalignment

Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to direct pulses of light to an area on a wafer; a scanning subsystem configured to scan the pulses of light across the wafer; a collection subsystem configured to image pulses of light scattered from the area on the wafer to a sensor, wherein the sensor is configured to integrate a number of the pulses of scattered light that is fewer than a number of the pulses of scattered light that can be imaged on the entire area of the sensor, and wherein the sensor is configured to generate output responsive to the integrated pulses of scattered light; and a computer subsystem configured to detect defects on the wafer using the output generated by the sensor.

Wafer inspection

A wafer is moved under an inspection spot by a rotary inspection system. The system rotates the wafer about an axis of rotation and translates the wafer along a linear trajectory. When the inspection spot is not aligned with the trajectory of the axis of rotation, an angular error is introduced in the representation of the position of the inspection spot with respect to the wafer by the rotary encoder. The angular error is corrected based on an angular error correction value. The angular error correction value is determined based on the distance between the inspection spot and the trajectory of the axis of rotation, the radial distance between the axis of rotation and the inspection spot at a first instance of a particular angular position, and a second radial distance between the axis of rotation and the inspection location at a second instance of the angular position.

Scanning inspection system with angular correction

A method of operating an image sensor with a continuously moving object is described. In this method, a timed delay integration mode (TDI-mode) operation can be performed during an extended-time illumination pulse. During this TDI-mode operation, charges stored by pixels of the image sensor are shifted only in a first direction, and track the image motion. Notably, a split-readout operation is performed only during non-illumination. During this split-readout operation, first charges stored by first pixels of the image sensor are shifted in the first direction and second charges stored by second pixels of the image sensor are concurrently shifted in a second direction, the second direction being opposite to the first direction.

Method and apparatus for high speed acquisition of moving images using pulsed illumination

Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to simultaneously form multiple illumination areas on the wafer with substantially no illumination flux between each of the areas. The system also includes a scanning subsystem configured to scan the multiple illumination areas across the wafer. In addition, the system includes a collection subsystem configured to simultaneously and separately image light scattered from each of the areas onto two or more sensors. Characteristics of the two or more sensors are selected such that the scattered light is not imaged into gaps between the two or more sensors. The two or more sensors generate output responsive to the scattered light. The system further includes a computer subsystem configured to detect defects on the wafer using the output of the two or more sensors.

Various embodiments for extended defect sizing range for wafer inspection are provided. One inspection system includes an illumination subsystem configured to direct light to the wafer. The system also includes an image sensor configured to detect light scattered from wafer defects and to generate output responsive to the scattered light. The image sensor is also configured to not have an anti-blooming feature such that when a pixel in the image sensor reaches full well capacity, excess charge flows from the pixel to one or more neighboring pixels in the image sensor. The system further includes a computer subsystem configured to detect the defects on the wafer using the output and to determine a size of the defects on the wafer using the output generated by a pixel and any neighboring pixels of the pixel to which the excess charge flows.

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Mountain View, CA, United States of America

Yury Yuditsky