Kabushiki Kaisha Toshiba

Yuriko Seino

Koji Asakawa

Hiroko Nakamura

Shigeki Hattori

Masahiro Kanno

Satoshi Mikoshiba

Tsukasa Azuma

Atsushi Hieno

Naoko Kihara

Hiroki Yonemitsu

Ryota Kitagawa

Hirokazu Kato

Yasunobu Onishi

Yasuhiko Sato

Yukiko Kikuchi

Momoka Higa

According to one embodiment, a pattern formation method includes forming a base structure including first and second guide portions each including a pinning portion, and a neutral portion, forming a block copolymer film containing first and second polymers on the bass structure, performing a predetermined treatment for the block copolymer film, thereby forming first and second pattern portions formed of the first polymer, forming third and fourth pattern portions formed of the second polymer, and forming a fifth pattern portion formed of the first and second polymers. The fifth pattern portion includes a plurality of first portions formed of the second polymer, and a second portion formed of the first polymer and provided on the neutral portion and the first portions.

Pattern formation method

A self-organization material according to an embodiment includes a block copolymer and a top coat material. The block copolymer contains a first block and a second block. The second block has a surface free energy higher than that of the first block. The top coat material contains a first portion having a surface free energy higher than that of the first block and lower than that of the second block, and a second portion having a surface free energy lower than that of the first block. The first portion is one of a homopolymer miscible with both the first block and the second block, and a random copolymer having a repeating unit of the first block and a repeating unit of the second block. The second portion is one of an organic siloxane-containing polymer and a fluorine-containing polymer.

Self-organization material and pattern formation method

According to one embodiment, a pattern formation method includes forming a resist pattern on an underlying film, slimming the resist pattern, forming a pinning portion having affinity for a first polymer by depositing, on a surface of the slimmed resist pattern, an etching product produced by etching the underlying film, forming a neutral, film having affinity for the first polymer and a second polymer on the underlying film after the etching, forming a block copolymer film containing the first polymer and the second polymer on the pinning portion and the neutral film, forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation.

According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.

Method of forming pattern and laminate

In one embodiment, a method for forming pattern includes forming a guide layer on a substrate, forming a copolymer layer of a high-molecular block copolymer on the guide layer; and forming a phase-separation structure with a phase-separation cycle d by self-assembling the copolymer layer. The high-molecular block copolymer includes a first and a second polymer. The guide layer includes a first and a second region disposed on the substrate. Widths of the first and second region respectively are approximately (d/2)&#xd7;n and (d/2)&#xd7;m. Both of the first and second region are to be pinned with none of the first and second polymer. Surface energies of the first and second region are different from one another. Integers n and m are odd numbers. Value d is a phase-separation cycle of the high-molecular block copolymer.

Method for forming pattern and method for manufacturing semiconductor device

According to one embodiment, a pattern forming method includes forming, on an underlying region, a neutral film having an affinity for first and second polymers, forming a first pinning part having an affinity for the first polymer by irradiating a first region of the neutral film with an energy beam, forming, on the neutral film including the first pinning part, a block copolymer film containing the first and second polymers, and performing a predetermined treatment for the block copolymer film to perform a microphase separation.

Pattern forming method

According to one embodiment, a pattern formation method is provided, the pattern formation includes: laminating a self-assembled monolayer and a polymer film on a substrate; causing chemical bonding between the polymer film and the self-assembled monolayer by irradiation with an energy beam to form a polymer surface layer on the self-assembled monolayer; and forming on the polymer surface layer a polymer alloy having a pattern of phase-separated structures.

Pattern formation method and polymer alloy base material

According to one embodiment, a pattern forming method includes forming a physical guide that includes a first predetermined pattern in a first region on a lower layer film, and includes a second predetermined pattern and a dummy pattern in a second region on the lower layer film, forming a block polymer inside the physical guide, making the block polymer microphase-separated to form a pattern having a first polymer section and a second polymer section, removing the second polymer section to form a hole pattern, and processing the lower layer film after removal of the second polymer section, with the physical guide and the first polymer section used as a mask. Shapes of the hole patterns in the first and the second predetermined patterns are transferred to the lower layer film. A shape of the hole pattern in the dummy pattern is not transferred to the lower layer film.

According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.

Method of forming pattern

In one embodiment, a pattern forming method includes forming a physical guide that includes a first pattern in a first region and a second pattern in a second region on an underlying film, embedding a polymer material into a concave portion of the physical guide, microphase-separating the polymer material, to form a self-assembly pattern having a first and a second polymer sections, observing the self-assembly pattern in the second region, to determine from an observation result whether or not the self-assembly pattern in the first region has a predetermined shape, and selectively removing the first polymer section in the case of determining that the self-assembly pattern in the first region has the predetermined shape. The second pattern includes a pattern with a larger coverage ratio than the first pattern and a pattern with a smaller coverage ratio than the first pattern.

According to one embodiment, a pattern formation method contains: forming first guides by changing a surface energy of an underlayer material by transferring a pattern of a photomask onto the underlayer material by exposure, and forming second guides by changing the surface energy of the underlayer material between the first guides by diffraction of exposure light generated from the exposure; applying a block copolymer containing a plurality of types of polymer block chains onto the underlayer material; and causing any one of the polymer block chains to form a pattern in accordance with the first and second guides by microphase separation of the block copolymer by a heat treatment.

According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.

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Yokohama, Japan

Yuriko Seino