Kla Tencor Corporation

Kla Corporation

Other

Gm Global Technolgoy Operations, Inc.

Kla Corporation Ca

Yuri Paskover

Vladimir Levinski

Amnon Manassen

Andrew V Hill

Daria Negri

Yuval Lubashevsky

Nadav Gutman

Yoram Uziel

Daniel Kandel

Ohad Bachar

Avi Abramov

Anna Golotsvan

Yossi Simon

Nireekshan K Reddy

Yoni Shalibo

Nachshon Rothman

Itay Gdor

Yonatan Vaknin

Sharon Aharon

Nir BenDavid

Dror Yaacov

Michael E Adel

Mark Ghinovker

Tzvi Philipp

Roie Volkovich

Mark Davis Smith

Eran Amit

Joel L Seligson

Guy Cohen

Tal Marciano

Barry Loevsky

Eitan Hajaj

Tzahi Grunzweig

Gilad Laredo

Andrew W Averhart

Myungjun Lee

Tal Itzkovich

David Gready

Boris Efraty

Nimrod Shuall

Ariel Hildesheim

Claire Staniunas

Dor Perry

Shlomo Eisenbach

Alexander Volfman

Tomer Pe'er

Yuval Lubashevksy

A system for use with a misregistration metrology tool (MMT), the system including a database including a plurality of process variation (PV) categories and a corresponding plurality of parameter sets and a process variation accommodation engine (PVAE) including a measurement site process variation category associator (MSPVCA) operative to associate a measurement site being measured by the MMT, at least partially based on an MMT output relating to the measurement site, with a measurement site process variation category (MSPVC), the MSPVC being one of the plurality of PV categories, a measurement site parameter set retriever (MSPSR) operative to retrieve a measurement site parameter set (MSPS) corresponding to the MSPVC and a measurement site parameter set communicator (MSPSC) operative to communicate the MSPS to the MMT.

Systems and methods for measurement of misregistration and amelioration thereof

A method includes generating a sequence of images of a semiconductor wafer from first and second detectors. The first detector images the wafer with first imaging parameters and the second detector images the wafer with second imaging parameters. The first or second imaging parameters are varied across the sequence of images to provide variation at sites across the wafer. The method includes providing a metric indicative of center-of-symmetry variations of first and second target features as a function of the varied imaging parameters based on the sequence of images. The method includes identifying a landscape of values of the varied image parameters for which the metric are below a predefined limit. The method includes generating a recipe for metrology measurements in which the varied imaging parameters are set to values within the landscape. The method includes generating metrology measurements from a production wafer based on the recipe.

Enhancing performance of overlay metrology

A perception system for a motor vehicle includes a camera with a lens having a field of view and configured to focus incident light from the field of view. The field of view includes a road having a road surface. The perception system also includes an imaging sensor arranged in the camera. The imaging sensor has a photosensitive surface defined by an imaging surface area configured to capture the incident light focused from the field of view. A first portion of the imaging surface area is configured to capture an image of the road. The perception system further includes a first polarizer array arranged across the first portion of the imaging surface area and configured to reduce glare from the road surface.

Perception camera with road surface glare reduction

A metrology system may include an imaging sub-system including one or more lenses and a detector to image a sample, where the sample includes metrology target elements on two or more sample layers. The metrology system may further include a controller to determine layer-specific imaging configurations of the imaging sub-system to image the metrology target elements on the two or more sample layers within a selected image quality tolerance, where each layer-specific imaging configuration includes a selected configuration of one or more components of the imaging sub-system. The controller may further receive, from the imaging sub-system, one or more images of the metrology target elements on the two or more sample layers generated using the layer-specific imaging configurations. The controller may further provide a metrology measurement based on the one or more images of the metrology target elements on the two or more sample layers.

Systems and methods for metrology with layer-specific illumination spectra

An overlay metrology system may scan a sample including inverted Moir&#xe9; structure pairs along a scan direction, include an illumination sub-system to illuminate first and second Moir&#xe9; structures of one of an inverted Moir&#xe9; structure pair with common mutually coherent illumination beam distributions, and include an objective lens to capture at least +/&#x2212;1 diffraction orders from sample, where a first pupil plane includes overlapping distributions of the collected light with an interference pattern associated with relative wavefront tilt. The system may also include a diffractive element in the first pupil plane, where one diffraction order associated with the first Moir&#xe9; structure and one diffraction order associated with the second Moir&#xe9; structure overlap at a common overlap region in a field plane, and a collection field stop located in the field plane to pass light in the common overlap region and block remaining light and remove the relative wavefront tilt.

Moir&#xe9; scatterometry overlay

Systems and methods are provided which utilize optical microcavity probes to map wafer topography by near-field interactions therebetween in a manner which complies with high volume metrology requirements. The optical microcavity probes detect features on a wafer by shifts in an interference signal between reference radiation and near-field interactions of radiation in the microcavities and wafer features, such as device features and metrology target features. Various illumination and detection configurations provide quick and sensitive signals which are used to enhance optical metrology measurements with respect to their accuracy and sensitivity. The optical microcavity probes may be scanned at a controlled height and position with respect to the wafer and provide information concerning the spatial relations between device and target features.

Optical near-field metrology

A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

A target for use in the measurement of misregistration between layers formed on a wafer in the manufacture of semiconductor devices, the target including a first pair of periodic structures (FPPS) and a second pair of periodic structures (SPPS), each of the FPPS and the SPPS including a first edge, a second edge, a plurality of first periodic structures formed in a first area as part of a first layer and having a first pitch along a first pitch axis, the first pitch axis not being parallel to either of the first edge or second edge, and a plurality of second periodic structures formed in a second area as part of a second layer and having the first pitch along a second pitch axis, the second pitch axis being generally parallel to the first pitch axis.

Non-orthogonal target and method for using the same in measuring misregistration of semiconductor devices

A metrology target is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology target includes a first set of pattern elements having a first pitch, where the first set of pattern elements includes segmented pattern elements. The metrology target includes a second set of pattern elements having a second pitch, where the second set of pattern elements includes segmented pattern elements. The metrology target includes a third set of pattern elements having a third pitch, where the third set of pattern elements includes segmented pattern elements.

On-the-fly scatterometry overlay metrology target

Metrology tools and methods are provided, which estimate the effect of topographic phases corresponding to different diffraction orders, which result from light scattering on periodic targets, and adjust the measurement conditions to improve measurement accuracy. In imaging, overlay error magnification may be reduced by choosing appropriate measurement conditions based on analysis of contrast function behavior, changing illumination conditions (reducing spectrum width and illumination NA), using polarizing targets and/or optical systems, using multiple defocusing positions etc. On-the-fly calibration of measurement results may be carried out in imaging or scatterometry using additional measurements or additional target cells.

Topographic phase control for overlay measurement

Metrology methods and tools are provided, which enhance the accuracy of the measurements and enable simplification of the measurement process as well as improving the correspondence between the metrology targets and the semiconductor devices. Methods comprise illuminating the target in a Littrow configuration to yield a first measurement signal comprising a &#x2212;1diffraction order and a 0diffraction order and a second measurement signal comprising a +1distraction order and a 0diffraction order, wherein the &#x2212;1diffraction order of the first measurement signal and the +1diffraction order of the second measurement signal are diffracted at 180&#xb0; to a direction of the illumination, performing a first measurement of the first measurement signal and a second measurement of the second measurement signal, and deriving metrology metric(s) therefrom. Optionally, a reflected 0diffraction order may be split to yield components which interact with the &#x2212;1and +1diffraction orders.

Off-axis illumination overlay measurement using two-diffracted orders imaging

Scatterometry overlay (SCOL) measurement methods, systems and targets are provided to enable efficient SCOL metrology with in-die targets. Methods comprise generating a signal matrix by: illuminating a SCOL target at multiple values of at least one illumination parameter, and at multiple spot locations on the target, wherein the illumination is at a NA (numerical aperture) &#x3e;&#x2153; yielding a spot diameter &#x3c;1&#x3bc;, measuring interference signals of zeroth and first diffraction orders, and constructing the signal matrix from the measured signals with respect to the illumination parameters and the spot locations on the target; and deriving a target overlay by analyzing the signal matrix. The SCOL targets may be reduced to be a tenth in size with respect to prior art targets, as less and smaller target cells are required, and be easily set in-die to improve the accuracy and fidelity of the metrology measurements.

Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)

A parameter-stable misregistration measurement amelioration system and method including providing a wafer, including a plurality of multilayered semiconductor devices formed thereon, selected from a batch wafers intended to be identical, using a misregistration metrology tool to measure misregistration at multiple sites between at least a first layer and a second layer of the wafer, using a plurality of sets of measurement parameters, thereby generating measured misregistration data for each of the sets of measurement parameters, identifying and removing a parameter-dependent portion and a mean error portion from the measured misregistration data for the wafer for each of the sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for the wafer.

Parameter-stable misregistration measurement amelioration in semiconductor devices

Metrology methods are provided for deriving metrology measurement parameter value(s) by identifying the value(s) in which the corresponding metrology measurement signal(s) have minimal amplitude asymmetry. Selecting the measurement parameter values as disclosed reduces significantly the measurement inaccuracy. For example, wavelength values and/or focus values may be detected to indicate minimal amplitude asymmetry and/or minimal phase asymmetry. In certain embodiments, wavelength values which provide minimal amplitude asymmetry also provide minimal signal sensitivity to focus. Developed metrics may be further used to indicate process robustness across wafers and lots. In some embodiments, imaging accuracy may be enhanced by through-focus landscaping of the amplitude asymmetry and detection of parameters values with minimal amplitude asymmetry.

Estimating amplitude and phase asymmetry in imaging technology for achieving high accuracy in overlay metrology

A method of monitoring overlay is used in a manufacturing process in which successive layers are deposited one over another to form a stack. Each layer may include a periodic structure such as a diffraction grating to be aligned with a periodic structure in another layer. The stacked periodic structures may be illuminated to form + and &#x2212; first order diffraction patterns from the periodic structures. An image of the stacked periodic structures may be captured including + and &#x2212; diffraction patterns. The + and &#x2212; diffraction patterns may be compared to calculate the overlay between successive layers.

Diffraction based overlay scatterometry

Growing community of inventors

Caesarea, Israel

Yuri Paskover