Advanced Ion Technology, Inc.

Other

Yuri Maishev

James A Ritter

Leonid Velikov

Alexander Shkolnik

Yuri Terentiev

Leonid Velikuv

A multiple-cell plasma source consists of a pair of perforated plate-like cathodes and a perforated plate-like anode between the both cathode plates. Perforations in all three plates are coaxial and form a plurality of cells in which a Penning discharge plasma is generated due to the passage of axial components of the magnetic field through the individual cells. Since in all cells the plasma flow components are generated and work independently, there are no limitations for an increase in the surface area of the upper cathode plate, which has plasma emitting holes, so that the plasma source can treat objects of a large surface area. The plasma source of the invention has various means for controlling and adjusting the plasma pattern, distribution, parameters, and shape.

Multiple-cell source of uniform plasma

A cold-cathode type ion-beam source with a closed-loop ion-emitting slit and electrons drifting in crosses electric and magnetic fields is characterized by the absence of a metal anode which is replaced by a pair of positively charged bodies, such as concentric rings of a conductive material which are located inside a hollow housing of the ion source and are connected to a source of a positive potential. The ion-emitting slit is located between these rings in an upstream position in the direction of propagation of the ion beam. Replacement of a metallic anode with an anodic plasma, i.e., with a &ldquo;virtual anode&rdquo;, which is formed by a Penning-type discharge, descreases contamination of the ion beam by products of erosion of a metallic anode and increases the ion beam current, which results in more effective ionization of the workout gas.

Ion-beam source with virtual anode

The invention provides a multiple-cell ion-beam source in which magnetic poles of all adjacent cells have alternating polarities, i.e., the cells arranged in a single row from the center to the periphery of the cathode plate have polarities in the order of N-S-N-S-N . . . , etc. As a result, the direction of magnetic lines of forces in the aforementioned rows alternates, and therefore the magnetic flux is not accumulated towards the center. This means that the source of such a construction does not have dimensional limitations and ensures uniform distribution of the ion-beam current density over the entire surface of the object. Intensity of the magnetic field for each individual cell can be controlled individually. This allows adjustment in the distribution of the ion-beam current density over the surface of the object.

Ion-beam source with uniform distribution of ion-current density on the surface of an object being treated

The invention provides a sputtering system which consists of an ion beam and a target of a sputterable material. A distinguishing feature of the system of the invention is that the sputtering target forms a guide channel for an ion beam and sputtered particles, so that a portion of the ions collides with the walls of the target inside a closed volume of the target and forms neutral sputterable particles impinging the object. The other part of the ions goes directly to the object and participates in an ion-assisted overcoating. Thus, the special form of the target improves efficiency of sputtering, prevents scattering and the loss of the sputterable material. The system can be realized in various embodiments. One of the embodiments provides a multiple-cell system in which each cell has an individual ion-emitting slit formed by the end of a cathode rod of one cathode plate and the opening in the second cathode plate. Tubular or plate-like channeling targets are connected to the ion slits without any gaps in the form of a geometrical extensions of the individual ion-emitting slits. Another embodiment allows adjustment in the position of the rods with respect to the targets.

Ion-beam source with channeling sputterable targets and a method for channeled sputtering

A multiple-beam ion-beam assembly consisting of two or more concentrically arranged ring-shaped ion-beam sources having ion-beam slits that emit a plurality of ion beams which overlap on the surface being treated and thus ensure uniformity in distribution of ion currents on the treated surface. Since the ion-beam assembly consists of a plurality of individual source, uniform treatment can be performed on a large surface area. Several embodiments of the invention cover the systems with individual sources adjustable with respect to one another, with an oblique angle of incidence of beams emitted from individual source, and with combination of oblique angles and adjustable sources.

Multiple-beam ion-beam assembly

A combined ion-source and sputtering magnetron apparatus of the invention comprises a vacuum working chamber that contains a sputtering magnetron, an object to be treated fixed inside the housing of the chamber, and an ion-beam source installed within the working chamber between the object and the sputtering magnetron. In a preferred embodiment, the ion source is a cold-cathode ion source with a closed loop ion-emitting slit and drift of electrons in crossed electric and magnetic fields. The ion source emits the ion beam in the radial inward or outward direction onto the surface of the magnetron target at an oblique angle to the target surface. The bombardment of the target surface with the ion beam generates a large amount of sputtered particles. In addition, the ion bombardment forms a large amount of secondary electrons which are accelerated in the direction away from the target and are held in the crossed electric and magnetic fields of the magnetron target. These electrons ionize molecules of a working gas and forms a plasma. Ions are extracted from the plasma towards the target and sputter its material. This process is maintained in a steady mode. The apparatus is shown in various embodiments including a conveyor treatment.

Combined ion-source and target-sputtering magnetron and a method for sputtering conductive and nonconductive materials

A method for combined treatment of an object simultaneously with an ion beam and a magnetron plasma consists in that an object, e.g., a semiconductor substrate, is treated with ions of a working gas emitted from an ion-beam source and with particles of a sputterable material directed toward the object in the same direction as the ion beam. The method is carried our by means of an apparatus that comprises a combination of a sputtering magnetron with an ion-beam source. According to several embodiments, the cathode of the ion source is separated into two parts electrically isolated from each other by a closed-loop ion-emitting slit and by isolation pads. The sputterable target is placed either onto the entire cathode or onto part thereof which is charged negatively with respect to another part which is grounded. During the operation of the apparatus, ion beam emitted from the ion source acts as a viral anode with respect to the magnetron target. As a result, the efficiency and versatility of treatment is improved, and the combined apparatus has smaller dimensions and less expensive than an ion source and magnetron used separately.

Method for combined treatment of an object with an ion beam and a

A universal cold-cathode type ion source with closed-loop electron drifting and with ion-beam propagation direction perpendicular to the plane of electron drifting is intended for uniformly treating stationary or moveable objects. Treatment procedures include cleaning, activation, polishing, thin-film coating, or etching. The ion source of the invention allows for adjusting beam parameters and configurations and has an adjustable dimensions of the ionization space between the anode and the cathode. In a preferred embodiment, the adjustment is carried out by moving the anode with respect to the cathode. The moveable anode is shifted in the direction of propagation of the ion beam or in the opposite direction, whereby the tubular ion beam is either converged or diverged. As a result, it becomes possible to adjust the surface area being treated and characteristics of the ion beam such as average energy of ions in the beam and composition of the beam, in case of a multiple-component working medium.

Universal cold-cathode type ion source with closed-loop electron

The ion source of the invention emits ion beams radially inwardly or radially outwardly from the entire periphery of the closed-loop ion-emitting slit. In one embodiment, a tubular or oval-shaped hollow body, which also functions as a cathode, contains a similarly-shaped concentric anode spaced from the inner walls of the cathode at a distance required to form an ion-generating and accelerating space. The cathode has a continuous ion-emitting slit which is aligned with the position of the anode and is concentric thereto. A magnetic-field generation means is located inside the ring-shaped anode. When the ion source is energized by inducing an magnetic field, connecting the anode to a positive pole of the electric power supply unit, the cathode to a negative pole of the power supply unit, and supplying a working medium into the hollow housing, the electrons begin to drift in the annular space between the anode and cathode in the same direction in which the ions are emitted from the annular slit. By rearranging positions of magnet, anode, and cathode, it is possible to provide emission of ions in the inward or outward direction for treating outer or inner surfaces of tubular objects.

Cold-cathode ion source with propagation of ions in the electron drift

A cold-cathode ion source with a closed-loop ion-emitting slit which is provided with means for generating a cyclically-variable, e.g., alternating or pulsating electric or magnetic field in an anode-cathode space. These means may be made in the form of an alternating-voltage generator which generates alternating voltage on one of the cathode parts that form the ion-emitting slit, whereas the other slit-forming part is grounded. The alternating voltage deviates the ion beam in the slit with the same frequency of the alternating voltage. In accordance with another embodiment, the aforementioned means may be an electromagnetic coil which generates a magnetic field which passes through the ion-emitting slit, thus acting on the condition of the spatial-charge formation and, hence, on concentration of ions in the ion beam. The cold-cathode ion source may be of any type, i.e., with the ion beam emitted in the direction perpendicular to the direction of drift of electrons in the ion-emitting slit or with the direction of emission of the beam which coincides with the direction of electron drift.

Cold-cathode ion source with a controlled position of ion beam

A universal cold-cathode type ion source with a closed-loop electron drifting source and with an ion-beam propagation direction perpendicular to the plane of electron drifting is intended for uniformly treating stationary or moveable objects with such processes as cleaning, activation, polishing, thin-film coating, or etching. The ion source of the invention allows adjustment of beam parameters and configurations and has an ion emitting slit of an adjustable geometry. In one embodiment, the adjustment is carried out by changing the width of the slit by shifting moveable parts of the cathode in the direction perpendicular to the direction of the ion beam. In another embodiment the slit configuration is adjusted by shifting a moveable part of the cathode in the direction of the beam propagation. The invention also provides a method for adjusting the shape and configuration of the ion beam with respect to the object to be treated. The adjustment can be performed during the operation of the ion beam while observing the beam through a sealed transparent window of the vacuum chamber.

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Moscow, Russia

Yuri Maishev