Applied Materials Israel Limited

Bar-ilan University

B.g. Neaevtechnoloaies and Apolications Ltd.

Yuri Belenky

Ron Naftali

Yoram Uziel

Yuval Gronau

Doron Korngut

Benzion Sender

Jimmy Vishnipolsky

Adam Baer

Mariano Abramson

Samuel Ives Nackash

Chaim Braude

Lior Klein

Yosef Basson

Asaf Grosz

Lavy Shavit

Yohanan Madmon

Itzak Yair

Mordechai Rozen

Ron Bar-or

Rafi Kraus

Doron Aspir

A method, a non-transitory computer readable medium and a system for compensating for an electromagnetic interference induced deviation of an electron beam. The method may include obtaining measurement information about a magnetic field within an electron beam tool, the measurement information is generated by at least one planar Hall Effect magnetic sensor that is located within the electron beam tool; wherein the at least one planar Hall Effect magnetic sensor comprises at least one magnetometer integrated with at least one magnetic flux concentrator; estimating the electromagnetic interference induced deviation of the electron beam, the estimating is based on the magnetic field; and setting a trajectory of the electron beam to compensate for the electromagnetic interference induced deviation of the electron beam.

Compensating for an electromagnetic interference induced deviation of an electron beam

According to an embodiment, a support module is provided for supporting a substrate. The support module may include a chuck and a vertical stage. The chuck may include multiple chuck segments that are independently movable. When the substrate is positioned on the chuck, different chuck segments are positioned under different areas of the substrate. The vertical stage may include multiple piezoelectric motors. Each piezoelectric motor may be configured to perform nanometric scale elevation and lowering movements. The multiple piezoelectric motors may be configured to independently move the multiple chuck segments.

Chuck for supporting a wafer

A method for scanning an object, the method may include moving an object by a first mechanical stage that follows a first scan pattern; introducing multiple movements, by a second mechanical stage, between the object and the first mechanical stage while the first mechanical stage follows the first scan pattern; and obtaining, by optics, images of multiple suspected defects while the first mechanical stage follows the first scan pattern; wherein a weight of the first mechanical stage exceeds a weight of the second mechanical stage.

Scanning an object using multiple mechanical stages

A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.

System and method for temperature control of a semiconductor wafer

A system that includes: (a) a mask manipulator, that is arranged to: receive an opaque EUV pod that encloses an EUV mask, extract, in a highly clean environment, the EUV mask from the outer pod and the inner pod of the EUV pod, and cover an upper face of the EUV mask with protective cover that is at least partially transparent to DUV radiation; (b) a scanner, arranged to scan the EUV mask, using DUV illumination while maintaining in the scanner an environment that has a cleanliness level that is below a tolerable EUV mask cleanliness level; and (c) a transport system arranged to transport the EUV mask and the protective cover between the scanner and the mask manipulator.

Inspection of EUV masks by a DUV mask inspection tool

Growing community of inventors

Rishon Lezion, Israel

Yuri Belenky