Taiwan Semiconductor Manufacturing Comp. Ltd.

Yung-Sheng Liu

Chun-Jen Chen

Hsi-Kuei Cheng

Yi-Jen Lai

Yi-Chen Liu

Li-Guo Lee

Li-Hsien Huang

Tien-Chung Yang

Jun He

Ming-Feng Wu

A laser grooving operation is performed to form a plurality of grooves in a semiconductor die prior to attaching the semiconductor die to a semiconductor device package substrate. In addition to forming a first groove through which blade sawing is to be performed to separate the semiconductor die from other semiconductor dies, a second groove may be formed between the first groove and a seal ring of the semiconductor die. The second groove is configured to contain any potential delamination that might otherwise propagate to an active region of the semiconductor die. Accordingly, the second groove and the associated laser grooving operation described herein may reduce the likelihood of delamination that might otherwise be caused by swelling and/or expansion in a molding compound formed around the semiconductor die after the semiconductor die is attached to the semiconductor device package substrate.

Semiconductor device package and methods of formation

A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.

Semiconductor device structure and manufacturing method

Methods for forming semiconductor structures are provided. The method for forming a semiconductor structure includes forming a metal pad over a first substrate and forming a resist layer having an opening over the metal layer. The method for forming a semiconductor structure further includes forming a conductive pillar and a solder layer over the conductive pillar in the opening of the resist layer and removing the resist layer. The method for forming a semiconductor structure further includes removing a portion of the conductive pillar so that the conductive pillar has an angled sidewall.

Method for forming bump structure

A semiconductor structure is provided. The semiconductor structure includes a first substrate and a metal pad formed over the first substrate. The semiconductor structure further includes a modified conductive pillar having a top portion and a bottom portion formed over the metal pad and a solder layer formed over the modified conductive pillar. In addition, the top portion of the modified conductive pillar has a first sidewall in a first direction and a bottom portion of the modified conductive pillar has a second sidewall in a second direction different from the first direction.

Bump structure and method for forming the same

A semiconductor structure is provided. The semiconductor structure includes a first substrate and a metal pad formed over the first substrate. The semiconductor structure further includes a solder stud formed over the metal pad, and the solder stud has a flat top surface parallel to a top surface of the first substrate.

Solder stud structure

A package structure and a manufacturing method are provided. The package structure includes a semiconductor substrate and a first conductive feature over the semiconductor substrate. The package structure also includes a substrate and a second conductive feature over the substrate. The second conductive feature is bonded with the first conductive feature through a bonding structure. The package structure further includes a protection material surrounding the bonding structure, and the protection material is in direct contact with a side surface of the first conductive feature.

Package structure and manufacturing method

A semiconductor device structure and a manufacturing method are provided. The method includes forming a conductive pillar over a semiconductor substrate. The method also includes forming a solder layer over the conductive pillar. The method further includes forming a water-soluble flux over the solder layer. In addition, the method includes reflowing the solder layer to form a solder bump over the conductive pillar and form a sidewall protection layer over a sidewall of the conductive pillar during the solder layer is reflowed.

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Hsinchu, Taiwan

Yung-Sheng Liu