Taiwan Semiconductor Manufacturing Comp. Ltd.

Yung Cheng Lu

Tien I Bao

Hui Lin Chang

Chih Hsien Lin

Li Ping Li

A damascene structure and method for forming the same in a multi-density dielectric insulating layer the method including providing a substrate; forming at least a first layer comprising silicon oxide according to a first process having a first density; forming at least a second layer comprising silicon oxide according to a second process over the first layer having a second density less than the first density; etching a damascene opening through a thickness portion of the at least a first and the at least a second layer; and, filling the damascene opening to form a metal filled damascene.

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Taipei, Taiwan

Yung Cheng Lu